The ALD212904PAL is an 8-pin plastic dual-in-line package (PDIP) containing a precision-matched dual N-channel EPAD® MOSFET array designed for low-voltage, nanopower analog applications. It features a precision gate threshold voltage of +0.40V ±0.020V, with a maximum offset voltage between matched pairs of 10mV. The device operates with sub-threshold currents below 1nA and supports minimum operating voltages under 400mV. It exhibits a low on-resistance of 14Ω at VGS = +5.4V and can deliver output currents exceeding 50mA. The array provides matched temperature coefficients and operates within a temperature range of 0°C to +70°C. It meets RoHS lead-free requirements and is built for applications requiring ultra-low power, high matching fidelity, and precision current mirroring in energy harvesting or backup battery circuits.
MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V 80mA 500mW Through Hole 8-PDIP
Mosfet Array 2 N-Channel (Dual) Matched Pair 10.6V 80mA 500mW Through Hole 8-PDIP
MOSFET 2N-CH 10.6V 0.08A 8DIP
MOSFET Dual N-Ch Matched Pr VGS=0.0V
| Advanced Linear Devices, Inc. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | ALD212904PAL | ALD212904PAL-ND | ALD212904PAL | ALD212904PAL |
| Product Name | PRECISION N-CHANNEL EPAD® MOSFET ARRAY DUAL HIGH DRIVE NANOPOWER™ MATCHED PAIR | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | |||
| MOSFET Operating Mode | Enhancement; Precision Enhancement Mode | |||
| V(BR)DSS | 10 volts | |||
| IDSS | 79 milliamps |
