The ALD212902SAL is a dual precision enhancement mode N-channel EPAD® MOSFET array in an 8-pin SOIC package, designed for ultra-low voltage and nanopower applications. It features a precision gate threshold voltage of +0.20V ±0.02V with a maximum offset voltage of 10mV between matched pairs, enabling operation below 200mV with less than 1nA current and 1nW power. The device exhibits a typical on-resistance of 14Ω at VGS = +5.2V and can deliver output currents exceeding 50mA. It operates within a temperature range of 0°C to +70°C, meets RoHS standards with a lead-free finish, and supports high transconductance and tight parametric control across production lots.
MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V 80mA 500mW Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) Matched Pair 10.6V 80mA 500mW Surface Mount 8-SOIC
MOSFET Dual N-Ch Matched Pr VGS=0.0V
MOSFET 2N-CH 10.6V 0.08A 8SOIC
| Advanced Linear Devices, Inc. | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | ALD212902SAL | ALD212902SAL-ND | ALD212902SAL | ALD212902SAL |
| Product Name | PRECISION N-CHANNEL EPAD® MOSFET ARRAY DUAL HIGH DRIVE NANOPOWER™ MATCHED PAIR | FET, MOSFET Arrays | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | |||
| MOSFET Operating Mode | Enhancement; Precision Enhancement Mode | |||
| V(BR)DSS | 10 volts | |||
| IDSS | 79 milliamps |
