The ALD210808ASCL is a quad monolithic precision enhancement mode N-channel EPAD MOSFET array in a 16-pin SOIC package, designed for low voltage, low power analog applications. Each device has a factory-matched gate threshold voltage of +0.80V ±0.010V with an offset voltage of ≤2mV, enabling precise current mirroring and sub-threshold operation down to +0.05V. The array features a drain-source on-resistance of 25Ω at VGS = +5.8V, output current capability exceeding 50mA, and operates with input bias currents below 1nA and power consumption below 1nW. It supports temperature tracking with a VGS(th) temperature coefficient of -1.6mV/°C and meets RoHS standards with a lead-free finish. The device operates from 0°C to +70°C and includes ESD protection. Applications include nanopower current sources, energy harvesting interfaces, and precision analog switches.
MOSFET Array 4 N-Channel, Matched Pair 10.6V 80mA 500mW Surface Mount 16-SOIC
Mosfet Array 4 N-Channel, Matched Pair 10.6V 80mA 500mW Surface Mount 16-SOIC
MOSFET Quad N-Ch Matched Pr VGS=0.0V
MOSFET 4N-CH 10.6V 0.08A 16SOIC
| Advanced Linear Devices, Inc. | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | ALD210808ASCL | ALD210808ASCL-ND | ALD210808ASCL | ALD210808ASCL |
| Product Name | PRECISION N-CHANNEL EPAD® MOSFET ARRAY QUAD HIGH DRIVE MATCHED PAIR | FET, MOSFET Arrays | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | |||
| MOSFET Operating Mode | Precision Zero Threshold | |||
| V(BR)DSS | 10 volts | |||
| IDSS | 70 milliamps |
