Advanced Linear Devices, Inc. PRECISION N-CHANNEL EPAD® MOSFET ARRAY QUAD HIGH DRIVE MATCHED PAIR ALD210808APCL

Description
MOSFET Array 4 N-Channel, Matched Pair 10.6V 80mA 500mW Through Hole 16-PDIP
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Description
MOSFET Array 4 N-Channel, Matched Pair 10.6V 80mA 500mW Through Hole 16-PDIP
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Datasheet
Datasheet Summary
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The ALD210808APCL is a quad monolithic precision enhancement mode N-channel EPAD® MOSFET array in a 16-pin plastic DIP package, designed for low-voltage, low-power analog applications requiring matched pairs and nanopower operation. It features a precisely controlled gate threshold voltage of +0.80V ±0.01V, with a typical offset voltage between matched pairs of 1mV and a maximum of 2mV. The device operates with subthreshold currents below 1nA and supports supply voltages as low as 0.1V, delivering output currents exceeding 50mA. It exhibits a low on-resistance of 25Ω at VGS = +5.8V and a forward transconductance of 24 mmho. Temperature coefficients for threshold voltage and offset voltage are specified at -1.6 mV/°C and 5 µV/°C respectively. The part meets RoHS standards with a lead-free finish and operates within a 0°C to +70°C temperature range. ESD sensitivity requires proper handling procedures.

Datasheet Summary
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The ALD210808APCL is a quad monolithic precision enhancement mode N-channel EPAD® MOSFET array in a 16-pin plastic DIP package, designed for low-voltage, low-power analog applications requiring matched pairs and nanopower operation. It features a precisely controlled gate threshold voltage of +0.80V ±0.01V, with a typical offset voltage between matched pairs of 1mV and a maximum of 2mV. The device operates with subthreshold currents below 1nA and supports supply voltages as low as 0.1V, delivering output currents exceeding 50mA. It exhibits a low on-resistance of 25Ω at VGS = +5.8V and a forward transconductance of 24 mmho. Temperature coefficients for threshold voltage and offset voltage are specified at -1.6 mV/°C and 5 µV/°C respectively. The part meets RoHS standards with a lead-free finish and operates within a 0°C to +70°C temperature range. ESD sensitivity requires proper handling procedures.

Suppliers

Company
Product
Description
Supplier Links
PRECISION N-CHANNEL EPAD® MOSFET ARRAY QUAD HIGH DRIVE MATCHED PAIR - ALD210808APCL - Advanced Linear Devices, Inc.
Sunnyvale, CA, United States
PRECISION N-CHANNEL EPAD® MOSFET ARRAY QUAD HIGH DRIVE MATCHED PAIR
ALD210808APCL
PRECISION N-CHANNEL EPAD® MOSFET ARRAY QUAD HIGH DRIVE MATCHED PAIR ALD210808APCL
MOSFET Array 4 N-Channel, Matched Pair 10.6V 80mA 500mW Through Hole 16-PDIP

MOSFET Array 4 N-Channel, Matched Pair 10.6V 80mA 500mW Through Hole 16-PDIP

Supplier's Site Datasheet
FET, MOSFET Arrays - ALD210808APCL-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
ALD210808APCL-ND
FET, MOSFET Arrays ALD210808APCL-ND
Mosfet Array 4 N-Channel, Matched Pair 10.6V 80mA 500mW Through Hole 16-PDIP

Mosfet Array 4 N-Channel, Matched Pair 10.6V 80mA 500mW Through Hole 16-PDIP

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - ALD210808APCL - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
ALD210808APCL
Discrete Semiconductor Products - Transistors - FETs, MOSFETs ALD210808APCL
MOSFET 4N-CH 10.6V 0.08A 16DIP

MOSFET 4N-CH 10.6V 0.08A 16DIP

Supplier's Site
Sheung Wan, Hong Kong
MOSFET Quad N-Ch Matched Pr VGS=0.0V

MOSFET Quad N-Ch Matched Pr VGS=0.0V

Buy Now Datasheet

Technical Specifications

  Advanced Linear Devices, Inc. DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number ALD210808APCL ALD210808APCL-ND ALD210808APCL ALD210808APCL
Product Name PRECISION N-CHANNEL EPAD® MOSFET ARRAY QUAD HIGH DRIVE MATCHED PAIR FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel
MOSFET Operating Mode Precision Zero Threshold
V(BR)DSS 10 volts
IDSS 70 milliamps
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