The ALD210802PCL is a quad monolithic precision enhancement mode N-channel EPAD™ MOSFET array in a 16-pin plastic DIP package, designed for low-voltage, nano-power analog applications. Each device features a precisely matched gate threshold voltage of +0.20V ±0.020V at IDS = 10μA and VDS = 0.1V, with a typical offset voltage of 2mV and a temperature coefficient of -1.6 mV/°C. The array operates with sub-threshold currents below 1nA at voltages as low as 0.2V, while providing output drive currents exceeding 50mA and a low RDS(ON) of 25Ω at VGS = +5.2V. It supports zero-power normally-on circuits and exhibits tight lot-to-lot parametric control with excellent thermal tracking. The device meets RoHS standards and is rated for operation from 0°C to +70°C with a maximum power dissipation of 500mW.
MOSFET Array 4 N-Channel, Matched Pair 10.6V 80mA 500mW Through Hole 16-PDIP
Mosfet Array 4 N-Channel, Matched Pair 10.6V 80mA 500mW Through Hole 16-PDIP
MOSFET Quad N-Ch Matched Pr VGS=0.0V
MOSFET 4N-CH 10.6V 0.08A 16DIP
| Advanced Linear Devices, Inc. | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | ALD210802PCL | ALD210802PCL-ND | ALD210802PCL | ALD210802PCL |
| Product Name | PRECISION N-CHANNEL EPAD® MOSFET ARRAY QUAD HIGH DRIVE NANOPOWER MATCHED PAIR | FET, MOSFET Arrays | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | |||
| MOSFET Operating Mode | Enhancement; Precision Enhancement Mode | |||
| V(BR)DSS | 10 volts | |||
| IDSS | 70 milliamps |