The ALD210800 is a quad monolithic precision N-channel EPAD® MOSFET array with zero threshold voltage (VGS(th) = 0.00V ±0.01V), designed for ultra-low-voltage, nanopower analog applications. It operates from as low as +0.05V to +5V supply, with sub-threshold drain current below 1nA and operating power below 1nW. Each device has a maximum RDS(ON) of 25Ω at VGS = +5.0V and delivers output current exceeding 50mA. The array features matched pairs with offset voltage ≤10mV and drain-source on-resistance mismatch ≤0.6%. It is available in a 16-pin SOIC package with dimensions of 9.80mm to 10.00mm length and 3.50mm to 4.05mm width. The part meets RoHS standards and is rated for an operating temperature range of 0°C to +70°C.
MOSFET Array 4 N-Channel, Matched Pair 10.6V 80mA 500mW Surface Mount 16-SOIC
Mosfet Array 4 N-Channel, Matched Pair 10.6V 80mA 500mW Surface Mount 16-SOIC
MOSFET 4N-CH 10.6V 0.08A 16SOIC
MOSFET PREC N-CHAN EPAD CMOS MOSFET ARRAY
| Advanced Linear Devices, Inc. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | ALD210800ASCL | 1014-1214-ND | ALD210800ASCL | ALD210800ASCL |
| Product Name | PRECISION N-CHANNEL EPAD® MOSFET ARRAY QUAD HIGH DRIVE ZERO THRESHOLD™ MATCHED PAIR | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | |||
| MOSFET Operating Mode | Precision Zero Threshold | |||
| V(BR)DSS | 10 volts | |||
| IDSS | 70 milliamps |
