The ALD111933SAL is a monolithic dual N-channel enhancement mode matched pair MOSFET array in an 8-pin SOIC package, designed for precision low-power analog applications such as current mirrors, differential amplifiers, and voltage comparators. Each device features a precision threshold voltage of +3.30V with a maximum offset voltage of 20mV between the pair, enabling nano-watt operation and near-zero drain current referencing. The devices exhibit a gate threshold voltage temperature coefficient of -1.7 mV/°C and a matched offset voltage temperature coefficient of 5 µV/°C. Maximum drain-source voltage is 10.6V, with a power dissipation rating of 500mW. The package dimensions are 4.69mm to 5.00mm in length, 3.50mm to 4.05mm in width, and 1.35mm to 1.75mm in height. The part complies with RoHS standards as indicated by the "L" suffix in ordering codes. Operating temperature range is 0°C to +70°C.
MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V - 500mW Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) Matched Pair 10.6V 500mW Surface Mount 8-SOIC
MOSFET 2N-CH 10.6V 8SOIC
| Advanced Linear Devices, Inc. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | ALD111933SAL | 1014-1052-ND | ALD111933SAL |
| Product Name | DUAL N-CHANNEL ENHANCEMENT MODE EPAD® MATCHED PAIR MOSFET ARRAY | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | ||
| MOSFET Operating Mode | Enhancement; Enhancement Mode | ||
| V(BR)DSS | 10 volts | ||
| IDSS | 3 milliamps |
