Advanced Linear Devices, Inc. QUAD/DUAL ELECTRICALLY PROGRAMMABLE ANALOG DEVICE (EPAD™) ALD1110EPAL

Description
MOSFET Array 2 N-Channel (Dual) Matched Pair 10V - 600mW Through Hole 8-PDIP
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Description
MOSFET Array 2 N-Channel (Dual) Matched Pair 10V - 600mW Through Hole 8-PDIP
Request a Quote
Datasheet
Datasheet Summary
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ALD1110EPAL is a dual electrically programmable analog device (EPAD™) featuring two matched n-channel MOSFETs with electrically adjustable threshold voltages ranging from 1.000V to 3.000V in 0.1mV steps. It is packaged in an 8-pin plastic dual in-line package (PDIP) with dimensions of 9.40mm to 11.68mm in length and 7.62mm to 8.26mm in width. The device operates from 2V to 10V supply voltage and maintains threshold voltage stability with a typical 10-year drift of less than 2mV. It supports non-volatile e-trimming, offers high input impedance (>10¹² Ω), and exhibits tight matching in on-resistance (±0.5%) and transconductance (±25mS). Operating temperature range is 0°C to +70°C. ROHS compliant, with no mechanical moving parts and high G-shock tolerance. The part is designed for precision voltage/current trimming, temperature-compensated current sources, and matched-pair applications in sealed or remote systems.

Datasheet Summary
Powered by GS/AI

ALD1110EPAL is a dual electrically programmable analog device (EPAD™) featuring two matched n-channel MOSFETs with electrically adjustable threshold voltages ranging from 1.000V to 3.000V in 0.1mV steps. It is packaged in an 8-pin plastic dual in-line package (PDIP) with dimensions of 9.40mm to 11.68mm in length and 7.62mm to 8.26mm in width. The device operates from 2V to 10V supply voltage and maintains threshold voltage stability with a typical 10-year drift of less than 2mV. It supports non-volatile e-trimming, offers high input impedance (>10¹² Ω), and exhibits tight matching in on-resistance (±0.5%) and transconductance (±25mS). Operating temperature range is 0°C to +70°C. ROHS compliant, with no mechanical moving parts and high G-shock tolerance. The part is designed for precision voltage/current trimming, temperature-compensated current sources, and matched-pair applications in sealed or remote systems.

Suppliers

Company
Product
Description
Supplier Links
QUAD/DUAL ELECTRICALLY PROGRAMMABLE ANALOG DEVICE (EPAD™) - ALD1110EPAL - Advanced Linear Devices, Inc.
Sunnyvale, CA, United States
QUAD/DUAL ELECTRICALLY PROGRAMMABLE ANALOG DEVICE (EPAD™)
ALD1110EPAL
QUAD/DUAL ELECTRICALLY PROGRAMMABLE ANALOG DEVICE (EPAD™) ALD1110EPAL
MOSFET Array 2 N-Channel (Dual) Matched Pair 10V - 600mW Through Hole 8-PDIP

MOSFET Array 2 N-Channel (Dual) Matched Pair 10V - 600mW Through Hole 8-PDIP

Supplier's Site Datasheet
FET, MOSFET Arrays - ALD1110EPAL-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
ALD1110EPAL-ND
FET, MOSFET Arrays ALD1110EPAL-ND
Mosfet Array 2 N-Channel (Dual) Matched Pair 10V 600mW Through Hole 8-PDIP

Mosfet Array 2 N-Channel (Dual) Matched Pair 10V 600mW Through Hole 8-PDIP

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - ALD1110EPAL - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
ALD1110EPAL
Discrete Semiconductor Products - Transistors - FETs, MOSFETs ALD1110EPAL
MOSFET 2N-CH 10V 8DIP

MOSFET 2N-CH 10V 8DIP

Supplier's Site

Technical Specifications

  Advanced Linear Devices, Inc. DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number ALD1110EPAL ALD1110EPAL-ND ALD1110EPAL
Product Name QUAD/DUAL ELECTRICALLY PROGRAMMABLE ANALOG DEVICE (EPAD™) FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
MOSFET Operating Mode E-trimmable, common source
V(BR)DSS 10 volts
IDSS 3 milliamps
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