The ALD110908ASAL is a dual N-channel enhancement mode MOSFET array in an 8-pin SOIC package, designed for precision analog applications such as current mirrors and differential amplifiers. It features a gate threshold voltage of 0.80V with a match of 2mV between devices, a typical input impedance of 10^12 Ω, and drain-source on resistance of 500 Ω at VGS = +4.8V. The devices exhibit tight parametric matching, low input capacitance of 2.5 pF, and a DC current gain exceeding 10^8. Operating temperature ranges from 0°C to +70°C, with a maximum drain-source voltage of 10.6V and power dissipation of 500 mW. The part meets RoHS standards and is suited for low-voltage, low-power applications.
MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V 12mA, 3mA 500mW Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) Matched Pair 10.6V 12mA, 3mA 500mW Surface Mount 8-SOIC
MOSFET 2N-CH 10.6V 8SOIC
| Advanced Linear Devices, Inc. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | ALD110908ASAL | 1014-1039-ND | ALD110908ASAL |
| Product Name | QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® PRECISION MATCHED PAIR MOSFET ARRAY | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | ||
| MOSFET Operating Mode | Enhancement; Precision Enhancement Mode | ||
| V(BR)DSS | 10 volts | ||
| IDSS | 3 milliamps |
