ALD110900PAL is a dual N-channel zero threshold EPAD MOSFET array in an 8-pin plastic dual in-line package. Each MOSFET has a gate threshold voltage of 0.00V ±0.02V at 1µA drain current and 0.1V drain-source voltage, with a typical on-resistance of 104kΩ at VGS = 0.00V and VDS = 0.1V. The devices feature matched threshold voltage offset of up to 10mV and a temperature coefficient of 5µV/°C for offset voltage. Maximum drain-source voltage is 10.6V, gate-source voltage is 10.6V, and power dissipation is 500mW. Operating temperature range is 0°C to +70°C. The package dimensions comply with PDIP-8 standards. The part is RoHS compliant as indicated by the 'L' suffix. Devices exhibit low input capacitance of 2.5pF and low leakage currents, suitable for low-voltage, low-power analog circuits including current mirrors, differential amplifiers, and precision sensor interfaces.
MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V - 500mW Through Hole 8-PDIP
Mosfet Array 2 N-Channel (Dual) Matched Pair 10.6V 500mW Through Hole 8-PDIP
MOSFET 2N-CH 10.6V 8DIP
| Advanced Linear Devices, Inc. | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | ALD110900PAL | 1014-1032-ND | ALD110900PAL | ALD110900PAL |
| Product Name | QUAD/DUAL N-CHANNEL ZERO THRESHOLD EPAD® PRECISION MATCHED PAIR MOSFET ARRAY | FET, MOSFET Arrays | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | |||
| MOSFET Operating Mode | Precision Zero Threshold | |||
| V(BR)DSS | 10 volts | |||
| IDSS | 3 milliamps |