The ALD110802SCL is a quad N-channel enhancement mode MOSFET array in a 16-pin SOIC package, designed for low-voltage, precision analog applications such as current mirrors, differential amplifiers, and sub-threshold circuits. Each device features a matched gate threshold voltage of +0.20V with a mismatch of ±10mV, high input impedance of 10¹²Ω, and gate leakage current of 30pA at 25°C. The array exhibits excellent thermal tracking, with a VGS(th) temperature coefficient of -1.7mV/°C and offset voltage tempco of 5µV/°C. It operates from 0°C to +70°C, supports drain-source voltages up to 10.6V, and dissipates up to 500mW. The device meets RoHS standards with a lead-free finish and is suited for nanopower designs requiring high DC current gain and precise matching.
MOSFET Array 4 N-Channel, Matched Pair 10.6V - 500mW Surface Mount 16-SOIC
Mosfet Array 4 N-Channel, Matched Pair 10.6V 500mW Surface Mount 16-SOIC
MOSFET 4N-CH 10.6V 16SOIC
| Advanced Linear Devices, Inc. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | ALD110802SCL | 1014-1021-ND | ALD110802SCL |
| Product Name | QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® PRECISION MATCHED PAIR MOSFET ARRAY | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | ||
| MOSFET Operating Mode | Enhancement; Precision Enhancement Mode | ||
| V(BR)DSS | 10 volts | ||
| IDSS | 3 milliamps |
