The ALD1105PBL is a 14-pin plastic dual in-line package (PDIP) containing a matched pair of N-channel and P-channel enhancement-mode MOSFETs designed for precision analog applications such as current mirrors, differential amplifiers, and analog switches. It features a typical gate threshold voltage of 0.7V, input impedance of 10^13Ω, and gate leakage current of 100pA at 25°C. The device operates from 0°C to +70°C with a maximum power dissipation of 500mW and drain-source voltage rating of 10V. It is RoHS compliant and meets low offset voltage and thermal tracking requirements for matched transistor pair performance.
MOSFET Array 2 N and 2 P-Channel Matched Pair 10.6V - 500mW Through Hole 14-PDIP
Mosfet Array 2 N and 2 P-Channel Matched Pair 10.6V 500mW Through Hole 14-PDIP
MOSFET 2N/2P-CH 10.6V 14DIP
| Advanced Linear Devices, Inc. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | ALD1105PBL | 1014-1010-ND | ALD1105PBL | ALD1105PBL |
| Product Name | Dual N-Channel and Dual P-Channel Matched MOSFET Pair | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| MOSFET Operating Mode | Enhancement; Enhancement Mode | |||
| V(BR)DSS | 12 volts | |||
| IDSS | -2 to 4.8 milliamps | |||
| rDS(on) | 500 to 1800 ohms |
