The ALD1101APAL is a dual N-channel matched MOSFET pair in an 8-pin plastic DIP package, designed for precision analog applications such as current mirrors and differential amplifiers. It features a threshold voltage of 0.7V, input impedance of 10¹²Ω, gate leakage current of 100pA at 25°C, and a drain-source breakdown voltage of 10V. The matched pair offers offset voltage grades of 2mV, 5mV, or 10mV, with a negative current temperature coefficient and DC current gain of 10⁹. The device operates from 0°C to +70°C, complies with RoHS, and has a maximum power dissipation of 500mW. The device is enhancement-mode and characterized for use in +2V to +10V systems.
MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V - 500mW Through Hole 8-PDIP
Mosfet Array 2 N-Channel (Dual) Matched Pair 10.6V 500mW Through Hole 8-PDIP
MOSFET 2N-CH 10.6V 8DIP
| Advanced Linear Devices, Inc. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | ALD1101APAL | 1014-1000-ND | ALD1101APAL |
| Product Name | Dual N-Channel Matched MOSFET Pair | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | ||
| MOSFET Operating Mode | Enhancement; Enhancement Mode | ||
| V(BR)DSS | 12 volts | ||
| IDSS | 40 milliamps |
