Adesto Technologies Corporation, Inc. Memory - Flash - AT45DB641E-SHN2B-T AT45DB641E-SHN2B-T

Description
Manufacturer: Adesto Technologies Win Source Part Number: 845429-AT45DB641E-SH N2B-T Features: Memory IC 85 MHz Package: Reel - TR Family Name: AT45DB641 Categories: Integrated Circuits (ICs) ECCN: 3A991B1A Popularity: Medium Fake Threat In the Open Market: 76 pct. Supply and Demand Status: Limited Quantity per package: 2000 MSL Level: 1 (Unlimited) Estimated Pruduction Lead Time: 39 Weeks REACH Status: REACH Unaffected HTSUS: 8542.32.0071 Other Part Number: AT45DB641E-SHN2B-TTR , -AT45DB641E-SHN2B-T, AT45DB641E-SHN2B-TDK R, AT45DB641E-SHN2B-TCT
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Description
Manufacturer: Adesto Technologies Win Source Part Number: 845429-AT45DB641E-SH N2B-T Features: Memory IC 85 MHz Package: Reel - TR Family Name: AT45DB641 Categories: Integrated Circuits (ICs) ECCN: 3A991B1A Popularity: Medium Fake Threat In the Open Market: 76 pct. Supply and Demand Status: Limited Quantity per package: 2000 MSL Level: 1 (Unlimited) Estimated Pruduction Lead Time: 39 Weeks REACH Status: REACH Unaffected HTSUS: 8542.32.0071 Other Part Number: AT45DB641E-SHN2B-TTR , -AT45DB641E-SHN2B-T, AT45DB641E-SHN2B-TDK R, AT45DB641E-SHN2B-TCT
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Datasheet
Datasheet Summary
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The AT45DB641E-SHN2B-T is a 64-Mbit DataFlash memory device from Quarktwin Technology Ltd., designed for use with a single supply voltage ranging from 1.7 V to 3.6 V. It features a Serial Peripheral Interface (SPI) that supports modes 0 and 3, with a maximum clock frequency of 85 MHz. The device allows continuous read capability across the entire memory array and offers a low-power read option at up to 15 MHz. This memory chip includes user-configurable page sizes of 256 bytes or 264 bytes, with two independent SRAM data buffers for efficient data handling. It supports various programming and erasing options, including byte/page programming and multiple erase methods (page, block, sector, and chip erase). The device also incorporates advanced data protection features, such as individual sector protection and a one-time programmable security register. Power consumption is minimized with ultra-deep power-down modes, achieving typical currents of 400 nA in ultra-deep power-down and 5 µA in deep power-down. The memory has a minimum endurance of 100,000 program/erase cycles per page and a data retention period of 20 years. It is available in multiple packaging options, including an 8-lead SOIC and two DFN variants, and complies with RoHS standards. This product is suitable for applications requiring reliable and efficient flash memory solutions.

Datasheet Summary
Powered by GS/AI

The AT45DB641E-SHN2B-T is a 64-Mbit DataFlash memory device from Quarktwin Technology Ltd., designed for use with a single supply voltage ranging from 1.7 V to 3.6 V. It features a Serial Peripheral Interface (SPI) that supports modes 0 and 3, with a maximum clock frequency of 85 MHz. The device allows continuous read capability across the entire memory array and offers a low-power read option at up to 15 MHz. This memory chip includes user-configurable page sizes of 256 bytes or 264 bytes, with two independent SRAM data buffers for efficient data handling. It supports various programming and erasing options, including byte/page programming and multiple erase methods (page, block, sector, and chip erase). The device also incorporates advanced data protection features, such as individual sector protection and a one-time programmable security register. Power consumption is minimized with ultra-deep power-down modes, achieving typical currents of 400 nA in ultra-deep power-down and 5 µA in deep power-down. The memory has a minimum endurance of 100,000 program/erase cycles per page and a data retention period of 20 years. It is available in multiple packaging options, including an 8-lead SOIC and two DFN variants, and complies with RoHS standards. This product is suitable for applications requiring reliable and efficient flash memory solutions.

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Description
Supplier Links
Memory - Flash - AT45DB641E-SHN2B-T - 845429-AT45DB641E-SHN2B-T - Win Source Electronics
Laguna Hills, CA, United States
Memory - Flash - AT45DB641E-SHN2B-T
845429-AT45DB641E-SHN2B-T
Memory - Flash - AT45DB641E-SHN2B-T 845429-AT45DB641E-SHN2B-T
Manufacturer: Adesto Technologies Win Source Part Number: 845429-AT45DB641E-SH N2B-T Features: Memory IC 85 MHz Package: Reel - TR Family Name: AT45DB641 Categories: Integrated Circuits (ICs) ECCN: 3A991B1A Popularity: Medium Fake Threat In the Open Market: 76 pct. Supply and Demand Status: Limited Quantity per package: 2000 MSL Level: 1 (Unlimited) Estimated Pruduction Lead Time: 39 Weeks REACH Status: REACH Unaffected HTSUS: 8542.32.0071 Other Part Number: AT45DB641E-SHN2B-TTR , -AT45DB641E-SHN2B-T, AT45DB641E-SHN2B-TDK R, AT45DB641E-SHN2B-TCT

Manufacturer: Adesto Technologies
Win Source Part Number: 845429-AT45DB641E-SHN2B-T
Features: Memory IC 85 MHz
Package: Reel - TR
Family Name: AT45DB641
Categories: Integrated Circuits (ICs)
ECCN: 3A991B1A
Popularity: Medium
Fake Threat In the Open Market: 76 pct.
Supply and Demand Status: Limited
Quantity per package: 2000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 39 Weeks
REACH Status: REACH Unaffected
HTSUS: 8542.32.0071
Other Part Number: AT45DB641E-SHN2B-TTR, -AT45DB641E-SHN2B-T, AT45DB641E-SHN2B-TDKR, AT45DB641E-SHN2B-TCT

Buy Now Datasheet
Memory - AT45DB641E-SHN2B-T - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH Memory IC 64Mbit SPI 85 MHz 8-SOIC

FLASH Memory IC 64Mbit SPI 85 MHz 8-SOIC

Buy Now Datasheet
Memory - AT45DB641E-SHN2B-T - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH Memory IC 64Mbit SPI 85 MHz 8-SOIC

FLASH Memory IC 64Mbit SPI 85 MHz 8-SOIC

Buy Now Datasheet

Technical Specifications

  Win Source Electronics Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number 845429-AT45DB641E-SHN2B-T AT45DB641E-SHN2B-T
Product Name Memory - Flash - AT45DB641E-SHN2B-T Memory
Memory Category Flash Flash; FLASH
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