Adesto Technologies Corporation, Inc. Integrated Circuits (ICs) - Memory AT45DB641E-MHN-T

Description
Win Source Part Number: 976396-AT45DB641E-MH N-T Category: Integrated Circuits (ICs)>Memory Package: Tape & Reel Standard Package: 6,000 Mounting: SMD (SMT) Technology: FLASH Memory Type: Non-Volatile Memory Size: 64Mb (264 Bytes x 32K pages) Voltage - Supply: 1.7V ~ 3.6V Package / Case: 8-UDFN Exposed Pad Supplier Device Package: 8-UDFN (5x6) Temperature Range - Operating: -40°C ~ 85°C (TC) Memory Format: FLASH Clock Frequency: 85 MHz Write Cycle Time - Word, Page: 8µs, 5ms Memory Interface: SPI ECCN: 3A991B1A Fake Threat In the Open Market: 67 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8542.32.0071 Mfr: Adesto Technologies Other Names: -AT45DB641E-MHN-T,AT 45DB641E-MHN-TCT,AT4 5DB641E-MHN-TTR,AT45 DB641E-MHN-TDKR Base Product Number: AT45DB641
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Description
Win Source Part Number: 976396-AT45DB641E-MH N-T Category: Integrated Circuits (ICs)>Memory Package: Tape & Reel Standard Package: 6,000 Mounting: SMD (SMT) Technology: FLASH Memory Type: Non-Volatile Memory Size: 64Mb (264 Bytes x 32K pages) Voltage - Supply: 1.7V ~ 3.6V Package / Case: 8-UDFN Exposed Pad Supplier Device Package: 8-UDFN (5x6) Temperature Range - Operating: -40°C ~ 85°C (TC) Memory Format: FLASH Clock Frequency: 85 MHz Write Cycle Time - Word, Page: 8µs, 5ms Memory Interface: SPI ECCN: 3A991B1A Fake Threat In the Open Market: 67 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8542.32.0071 Mfr: Adesto Technologies Other Names: -AT45DB641E-MHN-T,AT 45DB641E-MHN-TCT,AT4 5DB641E-MHN-TTR,AT45 DB641E-MHN-TDKR Base Product Number: AT45DB641
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Datasheet
Datasheet Summary
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The AT45DB641E-MHN-T is a 64-Mbit DataFlash memory device from Quarktwin Technology Ltd., designed for use with a single supply voltage ranging from 1.7 V to 3.6 V. It features a Serial Peripheral Interface (SPI) that supports modes 0 and 3, with a maximum clock frequency of 85 MHz and a low-power read option up to 15 MHz. The device allows continuous read capability across the entire memory array and has a configurable page size of 256 or 264 bytes. This memory chip includes two independent SRAM data buffers, enabling data reception while reprogramming the main memory. It offers flexible programming options, including byte and page programming, as well as various erase options such as page, block, sector, and chip erase. The device is equipped with advanced data protection features, including individual sector protection and a one-time programmable security register. Power consumption is low, with typical currents of 400 nA in ultra-deep power-down mode and 25 µA in standby mode. The AT45DB641E-MHN-T has a minimum endurance of 100,000 program/erase cycles per page and a data retention period of 20 years. It is available in multiple packaging options, including an 8-pad ultra-thin DFN (5 x 6 x 0.6 mm) and complies with industrial temperature ranges.

Datasheet Summary
Powered by GS/AI

The AT45DB641E-MHN-T is a 64-Mbit DataFlash memory device from Quarktwin Technology Ltd., designed for use with a single supply voltage ranging from 1.7 V to 3.6 V. It features a Serial Peripheral Interface (SPI) that supports modes 0 and 3, with a maximum clock frequency of 85 MHz and a low-power read option up to 15 MHz. The device allows continuous read capability across the entire memory array and has a configurable page size of 256 or 264 bytes. This memory chip includes two independent SRAM data buffers, enabling data reception while reprogramming the main memory. It offers flexible programming options, including byte and page programming, as well as various erase options such as page, block, sector, and chip erase. The device is equipped with advanced data protection features, including individual sector protection and a one-time programmable security register. Power consumption is low, with typical currents of 400 nA in ultra-deep power-down mode and 25 µA in standby mode. The AT45DB641E-MHN-T has a minimum endurance of 100,000 program/erase cycles per page and a data retention period of 20 years. It is available in multiple packaging options, including an 8-pad ultra-thin DFN (5 x 6 x 0.6 mm) and complies with industrial temperature ranges.

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - 976396-AT45DB641E-MHN-T - Win Source Electronics
Laguna Hills, CA, United States
Integrated Circuits (ICs) - Memory
976396-AT45DB641E-MHN-T
Integrated Circuits (ICs) - Memory 976396-AT45DB641E-MHN-T
Win Source Part Number: 976396-AT45DB641E-MH N-T Category: Integrated Circuits (ICs)>Memory Package: Tape & Reel Standard Package: 6,000 Mounting: SMD (SMT) Technology: FLASH Memory Type: Non-Volatile Memory Size: 64Mb (264 Bytes x 32K pages) Voltage - Supply: 1.7V ~ 3.6V Package / Case: 8-UDFN Exposed Pad Supplier Device Package: 8-UDFN (5x6) Temperature Range - Operating: -40°C ~ 85°C (TC) Memory Format: FLASH Clock Frequency: 85 MHz Write Cycle Time - Word, Page: 8µs, 5ms Memory Interface: SPI ECCN: 3A991B1A Fake Threat In the Open Market: 67 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8542.32.0071 Mfr: Adesto Technologies Other Names: -AT45DB641E-MHN-T,AT 45DB641E-MHN-TCT,AT4 5DB641E-MHN-TTR,AT45 DB641E-MHN-TDKR Base Product Number: AT45DB641

Win Source Part Number: 976396-AT45DB641E-MHN-T
Category: Integrated Circuits (ICs)>Memory
Package: Tape & Reel
Standard Package: 6,000
Mounting: SMD (SMT)
Technology: FLASH
Memory Type: Non-Volatile
Memory Size: 64Mb (264 Bytes x 32K pages)
Voltage - Supply: 1.7V ~ 3.6V
Package / Case: 8-UDFN Exposed Pad
Supplier Device Package: 8-UDFN (5x6)
Temperature Range - Operating: -40°C ~ 85°C (TC)
Memory Format: FLASH
Clock Frequency: 85 MHz
Write Cycle Time - Word, Page: 8µs, 5ms
Memory Interface: SPI
ECCN: 3A991B1A
Fake Threat In the Open Market: 67 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0071
Mfr: Adesto Technologies
Other Names: -AT45DB641E-MHN-T,AT45DB641E-MHN-TCT,AT45DB641E-MHN-TTR,AT45DB641E-MHN-TDKR
Base Product Number: AT45DB641

Buy Now Datasheet
Memory - AT45DB641E-MHN-T - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH Memory IC 64Mbit SPI 85 MHz 8-UDFN (5x6)

FLASH Memory IC 64Mbit SPI 85 MHz 8-UDFN (5x6)

Buy Now Datasheet
Memory - AT45DB641E-MHN-T - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH Memory IC 64Mbit SPI 85 MHz 8-UDFN (5x6)

FLASH Memory IC 64Mbit SPI 85 MHz 8-UDFN (5x6)

Buy Now Datasheet
Flash Memory, 64Mbit, -40 To 85Deg C; Flash Memory Type - 94AC7434 - Newark, An Avnet Company
Chicago, IL, United States
Flash Memory, 64Mbit, -40 To 85Deg C; Flash Memory Type
94AC7434
Flash Memory, 64Mbit, -40 To 85Deg C; Flash Memory Type 94AC7434
FLASH MEMORY, 64MBIT, -40 TO 85DEG C; Flash Memory Type:Serial NOR; Memory Size:64Mbit; Flash Memory Configuration:-; IC Interface Type:SPI; Memory Case Style:UDFN; No. of Pins:8Pins; Clock Frequency:85MHz; Access Time:-; Supply RoHS Compliant: Yes

FLASH MEMORY, 64MBIT, -40 TO 85DEG C; Flash Memory Type:Serial NOR; Memory Size:64Mbit; Flash Memory Configuration:-; IC Interface Type:SPI; Memory Case Style:UDFN; No. of Pins:8Pins; Clock Frequency:85MHz; Access Time:-; Supply RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics Quarktwin Technology Ltd. Newark, An Avnet Company
Product Category Memory Chips Memory Chips Memory Chips
Product Number 976396-AT45DB641E-MHN-T AT45DB641E-MHN-T 94AC7434
Product Name Integrated Circuits (ICs) - Memory Memory Flash Memory, 64Mbit, -40 To 85Deg C; Flash Memory Type
Memory Category Flash; Non-Volatile Flash; FLASH Flash
Cycle Time 8000 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Supply Voltage 1.7V ~ 3.6V 3.6V; 1.7V ~ 3.6V
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