Adesto Technologies Corporation, Inc. Memory AT45DB041E-UUN2B-T

Description
FLASH Memory IC 4Mbit SPI 85 MHz 8-WLCSP (2.55x1.45)
Description
FLASH Memory IC 4Mbit SPI 85 MHz 8-WLCSP (2.55x1.45)
Datasheet
Datasheet Summary
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The AT45DB041E-UUN2B-T is a 4-Mbit DataFlash memory device from Quarktwin Technology Ltd., featuring a minimum supply voltage of 1.65 V and a maximum of 3.6 V. It operates using a Serial Peripheral Interface (SPI) and supports SPI modes 0 and 3, with a maximum clock frequency of 85 MHz. The device includes a continuous read capability across the entire memory array and offers low-power read options at up to 15 MHz. This memory device has a user-configurable page size of 256 or 264 bytes, with two independent SRAM data buffers that allow data reception while reprogramming the main memory. It supports various programming and erasing options, including byte/page programming and multiple erase methods (page, block, sector, and chip erase). The AT45DB041E-UUN2B-T also features advanced data protection capabilities, including individual sector protection and a one-time programmable security register. In terms of power consumption, the device exhibits low-power dissipation with typical currents of 400 nA in ultra-deep power-down mode and 25 ¬µA in standby mode. It has an endurance of 100,000 program/erase cycles at temperatures ranging from -40 ¬8C to +85 ¬8C and a data retention period of 20 years. The product is available in various packaging options, including an 8-lead SOIC and an ultra-thin DFN package, and complies with RoHS standards.

Datasheet Summary
Powered by GS/AI

The AT45DB041E-UUN2B-T is a 4-Mbit DataFlash memory device from Quarktwin Technology Ltd., featuring a minimum supply voltage of 1.65 V and a maximum of 3.6 V. It operates using a Serial Peripheral Interface (SPI) and supports SPI modes 0 and 3, with a maximum clock frequency of 85 MHz. The device includes a continuous read capability across the entire memory array and offers low-power read options at up to 15 MHz. This memory device has a user-configurable page size of 256 or 264 bytes, with two independent SRAM data buffers that allow data reception while reprogramming the main memory. It supports various programming and erasing options, including byte/page programming and multiple erase methods (page, block, sector, and chip erase). The AT45DB041E-UUN2B-T also features advanced data protection capabilities, including individual sector protection and a one-time programmable security register. In terms of power consumption, the device exhibits low-power dissipation with typical currents of 400 nA in ultra-deep power-down mode and 25 ¬µA in standby mode. It has an endurance of 100,000 program/erase cycles at temperatures ranging from -40 ¬8C to +85 ¬8C and a data retention period of 20 years. The product is available in various packaging options, including an 8-lead SOIC and an ultra-thin DFN package, and complies with RoHS standards.

Suppliers

Company
Product
Description
Supplier Links
Memory - AT45DB041E-UUN2B-T - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH Memory IC 4Mbit SPI 85 MHz 8-WLCSP (2.55x1.45)

FLASH Memory IC 4Mbit SPI 85 MHz 8-WLCSP (2.55x1.45)

Buy Now Datasheet
Memory - AT45DB041E-UUN2B-T - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH Memory IC 4Mbit SPI 85 MHz 8-WLCSP (2.55x1.45)

FLASH Memory IC 4Mbit SPI 85 MHz 8-WLCSP (2.55x1.45)

Buy Now Datasheet

Technical Specifications

  Quarktwin Technology Ltd.
Product Category Memory Chips
Product Number AT45DB041E-UUN2B-T
Product Name Memory
Memory Category Flash; FLASH
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