Adesto Technologies Corporation, Inc. Memory AT25DF256-SSHNGU-B

Description
FLASH Memory IC 256Kbit SPI 104 MHz 8-SOIC
Description
FLASH Memory IC 256Kbit SPI 104 MHz 8-SOIC
Datasheet
Datasheet Summary
Powered by GS/AI

The AT25DF256-SSHNGU-B is a 256-Kbit SPI serial flash memory device from Quarktwin Technology Ltd. It operates with a supply voltage range of 1.65V to 3.6V and supports SPI modes 0 and 3, with a maximum operating frequency of 104 MHz. The device features dual-output read capability, allowing for faster data retrieval. This memory device is designed with a flexible erase architecture, offering small page erase sizes of 256 bytes, as well as uniform block erase options of 4 Kbytes and 32 Kbytes. It includes a hardware-controlled write protection feature and a one-time programmable security register for unique device serialization and key storage. The typical page program time is 1.5 ms for 256 bytes, while the block erase times are 50 ms for 4 Kbytes and 350 ms for 32 Kbytes. The AT25DF256-SSHNGU-B is characterized by low power consumption, with a typical deep power-down current of 5 µA and a standby current of 25 µA. It has an endurance of 100,000 program/erase cycles and a data retention period of 20 years. The device is available in various package options, including an 8-lead SOIC and an 8-pad ultra-thin DFN package, and complies with industry standards for environmental safety.

Datasheet Summary
Powered by GS/AI

The AT25DF256-SSHNGU-B is a 256-Kbit SPI serial flash memory device from Quarktwin Technology Ltd. It operates with a supply voltage range of 1.65V to 3.6V and supports SPI modes 0 and 3, with a maximum operating frequency of 104 MHz. The device features dual-output read capability, allowing for faster data retrieval. This memory device is designed with a flexible erase architecture, offering small page erase sizes of 256 bytes, as well as uniform block erase options of 4 Kbytes and 32 Kbytes. It includes a hardware-controlled write protection feature and a one-time programmable security register for unique device serialization and key storage. The typical page program time is 1.5 ms for 256 bytes, while the block erase times are 50 ms for 4 Kbytes and 350 ms for 32 Kbytes. The AT25DF256-SSHNGU-B is characterized by low power consumption, with a typical deep power-down current of 5 µA and a standby current of 25 µA. It has an endurance of 100,000 program/erase cycles and a data retention period of 20 years. The device is available in various package options, including an 8-lead SOIC and an 8-pad ultra-thin DFN package, and complies with industry standards for environmental safety.

Suppliers

Company
Product
Description
Supplier Links
Memory - AT25DF256-SSHNGU-B - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH Memory IC 256Kbit SPI 104 MHz 8-SOIC

FLASH Memory IC 256Kbit SPI 104 MHz 8-SOIC

Buy Now Datasheet
Memory - AT25DF256-SSHNGU-B - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH Memory IC 256Kbit SPI 104 MHz 8-SOIC

FLASH Memory IC 256Kbit SPI 104 MHz 8-SOIC

Buy Now Datasheet

Technical Specifications

  Quarktwin Technology Ltd.
Product Category Memory Chips
Product Number AT25DF256-SSHNGU-B
Product Name Memory
Memory Category Flash; FLASH
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS4C1024 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 80 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 24LC04-I/SL - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Access Time 3.50E6 ns
Density 4 kbits
View Details
SDRAM - 1882660P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 5 ns
Density 512000 kbits
View Details
Controllers - BQ2204ASN-NTR - Quarktwin Technology Ltd.
Specs
Operating Temperature -40 to 85 C (-40 to 185 F)
Package Type SOIC; 16-SOIC (0.154\", 3.90mm Width)
Supply Voltage 4.5V ~ 5.5V
View Details
2 suppliers