Wafer World, Inc. 5032

Description
Characteristics Materials: Silicon Diameter: 50.8 Type: P Dopant: Boron Orientation: (111) ± 1° Resistivity-Actual: .001-.005 Thickness-actual: 300-350 Surface: P/E Grade: PRIME Misc Info. Growth Method: CZ Lot Size: 25
  • 5032 - Wafer World, Inc.
    Wafer World, Inc.
Description
Characteristics Materials: Silicon Diameter: 50.8 Type: P Dopant: Boron Orientation: (111) ± 1° Resistivity-Actual: .001-.005 Thickness-actual: 300-350 Surface: P/E Grade: PRIME Misc Info. Growth Method: CZ Lot Size: 25

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Product
Description
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- 5032 - Wafer World, Inc.
Wafer World, Inc.
West Palm Beach, FL, USA
5032
5032
Characteristics Materials: Silicon Diameter: 50.8 Type: P Dopant: Boron Orientation: (111) ± 1° Resistivity-Actual: .001-.005 Thickness-actual: 300-350 Surface: P/E Grade: PRIME Misc Info. Growth Method: CZ Lot Size: 25

Characteristics Materials: Silicon Diameter: 50.8 Type: P Dopant: Boron Orientation: (111) ± 1° Resistivity-Actual: .001-.005 Thickness-actual: 300-350 Surface: P/E Grade: PRIME Misc Info. Growth Method: CZ Lot Size: 25

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Technical Specifications

  Wafer World, Inc.
Product Category Semiconducting Materials
Product Number 5032
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