Wafer World, Inc. 3504

Description
Characteristics Materials: GaAs Diameter: 100.0 Type: P Dopant: Zn Orientation: (100) 2ø TOWARD (110) Resistivity-Actual: .02-.003 Thickness-actual: 350-400 Surface: P/E Grade: EPI Misc Info. Growth Method: VGF Lot Size: 25
  • 3504 - Wafer World, Inc.
    Wafer World, Inc.
Description
Characteristics Materials: GaAs Diameter: 100.0 Type: P Dopant: Zn Orientation: (100) 2ø TOWARD (110) Resistivity-Actual: .02-.003 Thickness-actual: 350-400 Surface: P/E Grade: EPI Misc Info. Growth Method: VGF Lot Size: 25

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Product
Description
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- 3504 - Wafer World, Inc.
Wafer World, Inc.
West Palm Beach, FL, USA
3504
3504
Characteristics Materials: GaAs Diameter: 100.0 Type: P Dopant: Zn Orientation: (100) 2ø TOWARD (110) Resistivity-Actual: .02-.003 Thickness-actual: 350-400 Surface: P/E Grade: EPI Misc Info. Growth Method: VGF Lot Size: 25

Characteristics Materials: GaAs Diameter: 100.0 Type: P Dopant: Zn Orientation: (100) 2ø TOWARD (110) Resistivity-Actual: .02-.003 Thickness-actual: 350-400 Surface: P/E Grade: EPI Misc Info. Growth Method: VGF Lot Size: 25

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Technical Specifications

  Wafer World, Inc.
Product Category Semiconducting Materials
Product Number 3504
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