Wafer World, Inc. 2551

Description
Characteristics Materials: Silicon Diameter: 50.8 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 11900-12100 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 4
  • 2551 - Wafer World, Inc.
    Wafer World, Inc.
Description
Characteristics Materials: Silicon Diameter: 50.8 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 11900-12100 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 4

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Product
Description
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- 2551 - Wafer World, Inc.
Wafer World, Inc.
West Palm Beach, FL, USA
2551
2551
Characteristics Materials: Silicon Diameter: 50.8 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 11900-12100 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 4

Characteristics Materials: Silicon Diameter: 50.8 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 11900-12100 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 4

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Technical Specifications

  Wafer World, Inc.
Product Category Semiconducting Materials
Product Number 2551
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