Wafer World, Inc. 2530

Description
Characteristics Materials: Silicon Diameter: 76.2 Type: N Dopant: Phos Orientation: (111) Resistivity-Actual: 1-20 Thickness-actual: 1975-2025 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 10
  • 2530 - Wafer World, Inc.
    Wafer World, Inc.
Description
Characteristics Materials: Silicon Diameter: 76.2 Type: N Dopant: Phos Orientation: (111) Resistivity-Actual: 1-20 Thickness-actual: 1975-2025 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 10

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Company
Product
Description
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- 2530 - Wafer World, Inc.
Wafer World, Inc.
West Palm Beach, FL, USA
2530
2530
Characteristics Materials: Silicon Diameter: 76.2 Type: N Dopant: Phos Orientation: (111) Resistivity-Actual: 1-20 Thickness-actual: 1975-2025 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 10

Characteristics Materials: Silicon Diameter: 76.2 Type: N Dopant: Phos Orientation: (111) Resistivity-Actual: 1-20 Thickness-actual: 1975-2025 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 10

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Technical Specifications

  Wafer World, Inc.
Product Category Semiconducting Materials
Product Number 2530
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