Wafer World, Inc. 2301

Description
Characteristics Materials: Germanium Diameter: 100.0 Type: P Dopant: Ga Orientation: (100) Resistivity-Actual: .01-.04 Thickness-actual: 450-500 Surface: P/P Grade: EPI Misc Info. Growth Method: CZ Lot Size: 1
  • 2301 - Wafer World, Inc.
    Wafer World, Inc.
Description
Characteristics Materials: Germanium Diameter: 100.0 Type: P Dopant: Ga Orientation: (100) Resistivity-Actual: .01-.04 Thickness-actual: 450-500 Surface: P/P Grade: EPI Misc Info. Growth Method: CZ Lot Size: 1

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Product
Description
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- 2301 - Wafer World, Inc.
Wafer World, Inc.
West Palm Beach, FL, USA
2301
2301
Characteristics Materials: Germanium Diameter: 100.0 Type: P Dopant: Ga Orientation: (100) Resistivity-Actual: .01-.04 Thickness-actual: 450-500 Surface: P/P Grade: EPI Misc Info. Growth Method: CZ Lot Size: 1

Characteristics Materials: Germanium Diameter: 100.0 Type: P Dopant: Ga Orientation: (100) Resistivity-Actual: .01-.04 Thickness-actual: 450-500 Surface: P/P Grade: EPI Misc Info. Growth Method: CZ Lot Size: 1

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Technical Specifications

  Wafer World, Inc.
Product Category Semiconducting Materials
Product Number 2301
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