Wafer World, Inc. 1915

Description
Characteristics Materials: GaAs Diameter: 50.8 Type: N Dopant: SI Orientation: (100-15ø) tow (111)A Resistivity-Actual: 4E18 Thickness-actual: 275¤25 Surface: P/E Grade: EPI Misc Info. Growth Method: VGF Lot Size: 5
  • 1915 - Wafer World, Inc.
    Wafer World, Inc.
Description
Characteristics Materials: GaAs Diameter: 50.8 Type: N Dopant: SI Orientation: (100-15ø) tow (111)A Resistivity-Actual: 4E18 Thickness-actual: 275¤25 Surface: P/E Grade: EPI Misc Info. Growth Method: VGF Lot Size: 5

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- 1915 - Wafer World, Inc.
Wafer World, Inc.
West Palm Beach, FL, USA
1915
1915
Characteristics Materials: GaAs Diameter: 50.8 Type: N Dopant: SI Orientation: (100-15ø) tow (111)A Resistivity-Actual: 4E18 Thickness-actual: 275¤25 Surface: P/E Grade: EPI Misc Info. Growth Method: VGF Lot Size: 5

Characteristics Materials: GaAs Diameter: 50.8 Type: N Dopant: SI Orientation: (100-15ø) tow (111)A Resistivity-Actual: 4E18 Thickness-actual: 275¤25 Surface: P/E Grade: EPI Misc Info. Growth Method: VGF Lot Size: 5

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Technical Specifications

  Wafer World, Inc.
Product Category Semiconducting Materials
Product Number 1915
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