Wafer World, Inc. 1363

Description
Characteristics Materials: GaAs Diameter: 50.8 Type: N Dopant: SI Orientation: (100) Resistivity-Actual: 4E18 Thickness-actual: 250-300 Surface: P/E Grade: Test Misc Info. Growth Method: VGF Lot Size: 5
Description
Characteristics Materials: GaAs Diameter: 50.8 Type: N Dopant: SI Orientation: (100) Resistivity-Actual: 4E18 Thickness-actual: 250-300 Surface: P/E Grade: Test Misc Info. Growth Method: VGF Lot Size: 5

Suppliers

Company
Product
Description
Supplier Links
 - 1363 - Wafer World, Inc.
West Palm Beach, FL, USA
Characteristics Materials: GaAs Diameter: 50.8 Type: N Dopant: SI Orientation: (100) Resistivity-Actual: 4E18 Thickness-actual: 250-300 Surface: P/E Grade: Test Misc Info. Growth Method: VGF Lot Size: 5

Characteristics Materials: GaAs Diameter: 50.8 Type: N Dopant: SI Orientation: (100) Resistivity-Actual: 4E18 Thickness-actual: 250-300 Surface: P/E Grade: Test Misc Info. Growth Method: VGF Lot Size: 5

Supplier's Site

Technical Specifications

  Wafer World, Inc.
Product Category Semiconducting Materials
Product Number 1363
Unlock Full Specs
to access all available technical data

Similar Products