Wafer World, Inc. 1202

Description
Characteristics Materials: Silicon Diameter: 100.0 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 350-400 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25
  • 1202 - Wafer World, Inc.
    Wafer World, Inc.
Description
Characteristics Materials: Silicon Diameter: 100.0 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 350-400 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25

Suppliers

Company
Product
Description
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- 1202 - Wafer World, Inc.
Wafer World, Inc.
West Palm Beach, FL, USA
1202
1202
Characteristics Materials: Silicon Diameter: 100.0 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 350-400 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25

Characteristics Materials: Silicon Diameter: 100.0 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 350-400 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25

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Technical Specifications

  Wafer World, Inc.
Product Category Semiconducting Materials
Product Number 1202
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