Wafer World, Inc. 1173

Description
Characteristics Materials: Silicon Diameter: 50.8 Type: N Dopant: Phos Orientation: (110) Resistivity-Actual: 1-20 Thickness-actual: 250-300 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25
Description
Characteristics Materials: Silicon Diameter: 50.8 Type: N Dopant: Phos Orientation: (110) Resistivity-Actual: 1-20 Thickness-actual: 250-300 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25

Suppliers

Company
Product
Description
Supplier Links
 - 1173 - Wafer World, Inc.
West Palm Beach, FL, USA
Characteristics Materials: Silicon Diameter: 50.8 Type: N Dopant: Phos Orientation: (110) Resistivity-Actual: 1-20 Thickness-actual: 250-300 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25

Characteristics Materials: Silicon Diameter: 50.8 Type: N Dopant: Phos Orientation: (110) Resistivity-Actual: 1-20 Thickness-actual: 250-300 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25

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Technical Specifications

  Wafer World, Inc.
Product Category Semiconducting Materials
Product Number 1173
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