Texas Instruments TPS1120 Dual P-channel Enhancemenent-Mode MOSFET TPS1120DR

Description
Dual P-channel Enhancemenent-Mode MOSFET 8-SOIC
Request a Quote Datasheet
Description
Dual P-channel Enhancemenent-Mode MOSFET 8-SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TPS1120 Dual P-channel Enhancemenent-Mode MOSFET - TPS1120DR - Texas Instruments
Dallas, TX, United States
TPS1120 Dual P-channel Enhancemenent-Mode MOSFET
TPS1120DR
TPS1120 Dual P-channel Enhancemenent-Mode MOSFET TPS1120DR
Dual P-channel Enhancemenent-Mode MOSFET 8-SOIC

Dual P-channel Enhancemenent-Mode MOSFET 8-SOIC

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPS1120DR - 055398-TPS1120DR - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPS1120DR
055398-TPS1120DR
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPS1120DR 055398-TPS1120DR
Manufacturer: Texas Instruments Win Source Part Number: 055398-TPS1120DR Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Family Name: TPS1120 Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -40°C to 150°C (TJ) Case / Package: 8-SOIC Maximum Power Dissipation: 840mW Drain-Source Breakdown Voltage: 15V Continuous Drain Current at 25°C: 1.17A Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 5.45nC @ 10V Maximum Rds On at Id,Vgs: 180 mOhm @ 1.5A, 10V Alternative Parts (Cross-Reference): TPS1120D; Introduction Date: February 15, 2004 ECCN: EAR99 Country of Origin: Taiwan Estimated EOL Date: 2028 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Limited

Manufacturer: Texas Instruments
Win Source Part Number: 055398-TPS1120DR
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: TPS1120
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: 8-SOIC
Maximum Power Dissipation: 840mW
Drain-Source Breakdown Voltage: 15V
Continuous Drain Current at 25°C: 1.17A
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 5.45nC @ 10V
Maximum Rds On at Id,Vgs: 180 mOhm @ 1.5A, 10V
Alternative Parts (Cross-Reference): TPS1120D;
Introduction Date: February 15, 2004
ECCN: EAR99
Country of Origin: Taiwan
Estimated EOL Date: 2028
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
FET, MOSFET Arrays - TPS1120DR - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
TPS1120DR
FET, MOSFET Arrays TPS1120DR
MOSFET 2P-CH 15V 1.17A 8-SOIC

MOSFET 2P-CH 15V 1.17A 8-SOIC

Supplier's Site Datasheet
FET, MOSFET Arrays - 296-1352-1-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
296-1352-1-ND
FET, MOSFET Arrays 296-1352-1-ND
Mosfet Array 2 P-Channel (Dual) 15V 1.17A 840mW Surface Mount 8-SOIC

Mosfet Array 2 P-Channel (Dual) 15V 1.17A 840mW Surface Mount 8-SOIC

Buy Now Datasheet
FET, MOSFET Arrays - 296-1352-6-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
296-1352-6-ND
FET, MOSFET Arrays 296-1352-6-ND
Mosfet Array 2 P-Channel (Dual) 15V 1.17A 840mW Surface Mount 8-SOIC

Mosfet Array 2 P-Channel (Dual) 15V 1.17A 840mW Surface Mount 8-SOIC

Buy Now Datasheet
FET, MOSFET Arrays - 296-1352-2-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
296-1352-2-ND
FET, MOSFET Arrays 296-1352-2-ND
Mosfet Array 2 P-Channel (Dual) 15V 1.17A 840mW Surface Mount 8-SOIC

Mosfet Array 2 P-Channel (Dual) 15V 1.17A 840mW Surface Mount 8-SOIC

Buy Now Datasheet
MOSFET 2P-CH 15V 1.17A 8-SOIC - 815-TPS1120DR - Utmel Electronic Limited
Hong Kong, China
MOSFET 2P-CH 15V 1.17A 8-SOIC
815-TPS1120DR
MOSFET 2P-CH 15V 1.17A 8-SOIC 815-TPS1120DR
MOSFET 2P-CH 15V 1.17A 8-SOIC

MOSFET 2P-CH 15V 1.17A 8-SOIC

Supplier's Site
Sheung Wan, Hong Kong
MOSFET Dual P-Ch Enh-Mode MOSFET

MOSFET Dual P-Ch Enh-Mode MOSFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - TPS1120DR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
TPS1120DR
Discrete Semiconductor Products - Transistors - FETs, MOSFETs TPS1120DR
MOSFET 2P-CH 15V 1.17A 8SOIC

MOSFET 2P-CH 15V 1.17A 8SOIC

Supplier's Site

Technical Specifications

  Texas Instruments Win Source Electronics ODG (Origin Data Global) DigiKey Utmel Electronic Limited VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number TPS1120DR 055398-TPS1120DR TPS1120DR 296-1352-1-ND 815-TPS1120DR TPS1120DR TPS1120DR
Product Name TPS1120 Dual P-channel Enhancemenent-Mode MOSFET TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPS1120DR FET, MOSFET Arrays FET, MOSFET Arrays MOSFET 2P-CH 15V 1.17A 8-SOIC MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel P-Channel; 2 P-Channel (Dual)
V(BR)DSS 15 volts 15 volts 15 volts
PD 840 milliwatts 840 milliwatts
TJ -40 to 150 C (-40 to 302 F) -40 to 150 C (-40 to 302 F) -40 to 150 C (-40 to 302 F)
Package Type SOT3; 8-SOIC 8-SOIC (0.154", 3.90mm Width) "8-SOIC (0.154"", 3.90mm Width)"
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