Texas Instruments TPS1120 Dual P-channel Enhancemenent-Mode MOSFET TPS1120DR

Dual P-channel Enhancemenent-Mode MOSFET 8-SOIC

Mosfet Array 2 P-Channel (Dual) 15V 1.17A 840mW Surface Mount 8-SOIC

Mosfet Array 2 P-Channel (Dual) 15V 1.17A 840mW Surface Mount 8-SOIC

Mosfet Array 2 P-Channel (Dual) 15V 1.17A 840mW Surface Mount 8-SOIC

Manufacturer: Texas Instruments
Win Source Part Number: 055398-TPS1120DR
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: TPS1120
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: 8-SOIC
Maximum Power Dissipation: 840mW
Drain-Source Breakdown Voltage: 15V
Continuous Drain Current at 25°C: 1.17A
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 5.45nC @ 10V
Maximum Rds On at Id,Vgs: 180 mOhm @ 1.5A, 10V
Alternative Parts (Cross-Reference): TPS1120D;
Introduction Date: February 15, 2004
ECCN: EAR99
Country of Origin: Taiwan
Estimated EOL Date: 2028
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Limited

Dual P-channel Enhancemenent-Mode MOSFET 8-SOIC Product overview: TPS1120DR from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, Dual, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, SOIC, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-TPS1120DR can be used for catalog matching and distributor lookup.

MOSFET 2P-CH 15V 1.17A 8-SOIC