Single P-channel Enhancement-Mode MOSFET 8-SOIC
MOSFET P-CH 15V 1.6A 8SOIC
Manufacturer: Texas Instruments
Win Source Part Number: 083912-TPS1100DR
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 791mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
Status: Active
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: 8-SOIC
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 15V
Continuous Drain Current at 25°C: 1.6A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 5.45nC @ 10V
Maximum Gate-Source Voltage: +2V, -15V
Maximum Rds On at Id,Vgs: 180 mOhm @ 1.5A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance
MOSFET P-CH 15V 1.6A 8SOIC
MOSFET P-CH 15V 1.6A 8SOIC
P-Channel 15V 1.6A (Ta) 791mW (Ta) Surface Mount 8-SOIC
Small Signal Field-Effect Transistor, 1.6A I(D), 15V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET P-CH 15V 1.6A 8SOIC
MOSFET Single P-Ch Enh-Mode MOSFET
| Texas Instruments | ODG (Origin Data Global) | Win Source Electronics | DigiKey | Rochester Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF MOSFET Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | TPS1100DR | TPS1100DR | 083912-TPS1100DR | 296-TPS1100DRCT-ND | TPS1100DR | TPS1100DR | TPS1100DR |
| Product Name | TPS1100 Single P-channel Enhancement-Mode MOSFET | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPS1100DR | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 15 volts | 15 volts | |||||
| IDSS | 1600 milliamps |
