Texas Instruments TPS1100 Single P-channel Enhancement-Mode MOSFET TPS1100D

Description
Single P-channel Enhancement-Mode MOSFET 8-SOIC
Request a Quote Datasheet
Description
Single P-channel Enhancement-Mode MOSFET 8-SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TPS1100 Single P-channel Enhancement-Mode MOSFET - TPS1100D - Texas Instruments
Dallas, TX, United States
TPS1100 Single P-channel Enhancement-Mode MOSFET
TPS1100D
TPS1100 Single P-channel Enhancement-Mode MOSFET TPS1100D
Single P-channel Enhancement-Mode MOSFET 8-SOIC

Single P-channel Enhancement-Mode MOSFET 8-SOIC

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 - TPS1100D - Rochester Electronics
Newburyport, MA, United States
Small Signal Field-Effect Transistor, 1.6A I(D), 15V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Small Signal Field-Effect Transistor, 1.6A I(D), 15V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPS1100D - 083866-TPS1100D - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPS1100D
083866-TPS1100D
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPS1100D 083866-TPS1100D
Manufacturer: Texas Instruments Win Source Part Number: 083866-TPS1100D Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 791mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V Status: Active Temperature Range - Operating: -40°C to 150°C (TJ) Case / Package: 8-SOIC Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 15V Continuous Drain Current at 25°C: 1.6A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 5.45nC @ 10V Maximum Gate-Source Voltage: +2V, -15V Maximum Rds On at Id,Vgs: 180 mOhm @ 1.5A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Balance

Manufacturer: Texas Instruments
Win Source Part Number: 083866-TPS1100D
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 791mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
Status: Active
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: 8-SOIC
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 15V
Continuous Drain Current at 25°C: 1.6A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 5.45nC @ 10V
Maximum Gate-Source Voltage: +2V, -15V
Maximum Rds On at Id,Vgs: 180 mOhm @ 1.5A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance

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Single FETs, MOSFETs - 296-3379-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
296-3379-5-ND
Single FETs, MOSFETs 296-3379-5-ND
P-Channel 15V 1.6A (Ta) 791mW (Ta) Surface Mount 8-SOIC

P-Channel 15V 1.6A (Ta) 791mW (Ta) Surface Mount 8-SOIC

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - TPS1100D - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
TPS1100D
Discrete Semiconductor Products - Transistors - FETs, MOSFETs TPS1100D
MOSFET P-CH 15V 1.6A 8SOIC

MOSFET P-CH 15V 1.6A 8SOIC

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
TPS1100D
MOSFET TPS1100D
MOSFET MOSFET 10ns RT

MOSFET MOSFET 10ns RT

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Technical Specifications

  Texas Instruments Rochester Electronics Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number TPS1100D TPS1100D 083866-TPS1100D 296-3379-5-ND TPS1100D TPS1100D
Product Name TPS1100 Single P-channel Enhancement-Mode MOSFET TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPS1100D Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity P-Channel P-Channel P-Channel; P-Channel P-Channel
Package Type SOIC8 SOT3; 8-SOIC "8-SOIC (0.154"", 3.90mm Width)" 8-SOIC (0.154, 3.90mm Width)
Packing Method Tube; Tube Rail; Tube; Tube/Rail Bulk; Tube; Bulk,Tube
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