- Trained on our vast library of engineering resources.

Skyworks Solutions, Inc. DME, DMF, DMJ Series: Silicon Beam-Lead Schottky Mixer Diodes—Singles, Pairs and Quads Bondable and Packaged Chips DMJ2502-000

Description
Skyworks beam-lead silicon Schottky barrier mixer diodes are designed for applications through 40 GHz. The beam-lead design reduces the problem of bonding to the very small area characteristic of the low capacitance junctions. Beam-lead Schottky barrier mixer diodes are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance with a narrow spread of capacitance values for close impedance control. A variety of forward voltages are available, ranging from low values for low, or starved, local oscillator drive levels to high values for high drive, low distortion mixer applications. Beam-lead diodes are available in a wide range of packages. Capacitance ranges and series resistances are comparable with the packaged devices that are available through K-band. Unpackaged diodes are well suited for use in microwave integrated circuits. The packaged devices are designed to be inserted as hybrid elements in strip, transmission line applications. Beam-lead Schottky barrier diodes are categorized by universal mixer applications in four frequency ranges: S, X, Ku and Ka bands. They may also be used as modulators and high-speed switches. Beam-lead diodes are suited for balanced mixers, due to their low parasitics and uniformity. A typical VF vs. IF curve is shown in Figure 1. Typical noise figures vs. LO drive is shown in Figure 2 for single N-type, low drive diode types. Features Low 1/f noise Low intermodulation distortion Epoxy and hermetically sealed packages SPC controlled wafer fabrication Applications Surveillance Systems Space Radar Instrumentation Electronic Warfare Avionics Military Communications
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
DME, DMF, DMJ Series: Silicon Beam-Lead Schottky Mixer Diodes—Singles, Pairs and Quads Bondable and Packaged Chips - DMJ2502-000 - Skyworks Solutions, Inc.
Irvine, CA, United States
DME, DMF, DMJ Series: Silicon Beam-Lead Schottky Mixer Diodes—Singles, Pairs and Quads Bondable and Packaged Chips
DMJ2502-000
DME, DMF, DMJ Series: Silicon Beam-Lead Schottky Mixer Diodes—Singles, Pairs and Quads Bondable and Packaged Chips DMJ2502-000
Skyworks beam-lead silicon Schottky barrier mixer diodes are designed for applications through 40 GHz. The beam-lead design reduces the problem of bonding to the very small area characteristic of the low capacitance junctions. Beam-lead Schottky barrier mixer diodes are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance with a narrow spread of capacitance values for close impedance control. A variety of forward voltages are available, ranging from low values for low, or starved, local oscillator drive levels to high values for high drive, low distortion mixer applications. Beam-lead diodes are available in a wide range of packages. Capacitance ranges and series resistances are comparable with the packaged devices that are available through K-band. Unpackaged diodes are well suited for use in microwave integrated circuits. The packaged devices are designed to be inserted as hybrid elements in strip, transmission line applications. Beam-lead Schottky barrier diodes are categorized by universal mixer applications in four frequency ranges: S, X, Ku and Ka bands. They may also be used as modulators and high-speed switches. Beam-lead diodes are suited for balanced mixers, due to their low parasitics and uniformity. A typical VF vs. IF curve is shown in Figure 1. Typical noise figures vs. LO drive is shown in Figure 2 for single N-type, low drive diode types. Features Low 1/f noise Low intermodulation distortion Epoxy and hermetically sealed packages SPC controlled wafer fabrication Applications Surveillance Systems Space Radar Instrumentation Electronic Warfare Avionics Military Communications

Skyworks beam-lead silicon Schottky barrier mixer diodes are designed for applications through 40 GHz. The beam-lead design reduces the problem of bonding to the very small area characteristic of the low capacitance junctions. Beam-lead Schottky barrier mixer diodes are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance with a narrow spread of capacitance values for close impedance control. A variety of forward voltages are available, ranging from low values for low, or starved, local oscillator drive levels to high values for high drive, low distortion mixer applications. Beam-lead diodes are available in a wide range of packages. Capacitance ranges and series resistances are comparable with the packaged devices that are available through K-band. Unpackaged diodes are well suited for use in microwave integrated circuits. The packaged devices are designed to be inserted as hybrid elements in strip, transmission line applications. Beam-lead Schottky barrier diodes are categorized by universal mixer applications in four frequency ranges: S, X, Ku and Ka bands. They may also be used as modulators and high-speed switches. Beam-lead diodes are suited for balanced mixers, due to their low parasitics and uniformity. A typical VF vs. IF curve is shown in Figure 1. Typical noise figures vs. LO drive is shown in Figure 2 for single N-type, low drive diode types.

Features

    • Low 1/f noise
    • Low intermodulation distortion
    • Epoxy and hermetically sealed packages
    • SPC controlled wafer fabrication

Applications

  • Surveillance Systems
  • Space
  • Radar
  • Instrumentation
  • Electronic Warfare
  • Avionics
  • Military Communications
Supplier's Site Datasheet
RF Schottky Diode - DMJ2502-000 - Richardson RFPD
Geneva, IL, United States
RF Schottky Diode
DMJ2502-000
RF Schottky Diode DMJ2502-000
DME, DMF, DMJ Series: Silicon Beam-Lead Schottky Mixer Diodes—Singles, Pairs and Quads Bondable and Packaged Chips

DME, DMF, DMJ Series: Silicon Beam-Lead Schottky Mixer Diodes—Singles, Pairs and Quads Bondable and Packaged Chips

Supplier's Site Datasheet
Discrete Semiconductor Products - Diodes - RF Diodes - DMJ2502-000 - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Diodes - RF Diodes
DMJ2502-000
Discrete Semiconductor Products - Diodes - RF Diodes DMJ2502-000
SCHOTTKY BEAMLEAD RING QUAD

SCHOTTKY BEAMLEAD RING QUAD

Supplier's Site

Technical Specifications

  Skyworks Solutions, Inc. Richardson RFPD Acme Chip Technology Co., Limited
Product Category Schottky Diodes RF Diodes RF Diodes
Product Number DMJ2502-000 DMJ2502-000 DMJ2502-000
Product Name DME, DMF, DMJ Series: Silicon Beam-Lead Schottky Mixer Diodes—Singles, Pairs and Quads Bondable and Packaged Chips RF Schottky Diode Discrete Semiconductor Products - Diodes - RF Diodes
VF 500 to 600 volts
Diode Type Schottky
Operating Frequency 2000 to 8000 MHz
Unlock Full Specs
to access all available technical data

Similar Products