Skyworks Solutions, Inc. DME, DMF, DMJ Series: Silicon Beam-Lead Schottky Mixer Diodes—Singles, Pairs and Quads Bondable and Packaged Chips DMJ2088-000

  • DME, DMF, DMJ Series: Silicon Beam-Lead Schottky Mixer Diodes—Singles, Pairs and Quads Bondable and Packaged Chips - DMJ2088-000 - Skyworks Solutions, Inc.
    Skyworks Solutions, Inc.
  • RF Schottky Diode - DMJ2088-000 - Richardson RFPD
    Richardson RFPD
  • Discrete Semiconductor Products - Diodes - RF Diodes - DMJ2088-000 - Acme Chip Technology Co., Limited
    Acme Chip Technology Co., Limited
Description
Skyworks beam-lead silicon Schottky barrier mixer diodes are designed for applications through 40 GHz. The beam-lead design reduces the problem of bonding to the very small area characteristic of the low capacitance junctions. Beam-lead Schottky barrier mixer diodes are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance with a narrow spread of capacitance values for close impedance control. A variety of forward voltages are available, ranging from low values for low, or starved, local oscillator drive levels to high values for high drive, low distortion mixer applications. Beam-lead diodes are available in a wide range of packages. Capacitance ranges and series resistances are comparable with the packaged devices that are available through K-band. Unpackaged diodes are well suited for use in microwave integrated circuits. The packaged devices are designed to be inserted as hybrid elements in strip, transmission line applications. Beam-lead Schottky barrier diodes are categorized by universal mixer applications in four frequency ranges: S, X, Ku and Ka bands. They may also be used as modulators and high-speed switches. Beam-lead diodes are suited for balanced mixers, due to their low parasitics and uniformity. A typical VF vs. IF curve is shown in Figure 1. Typical noise figures vs. LO drive is shown in Figure 2 for single N-type, low drive diode types. Features Low 1/f noise Low intermodulation distortion Epoxy and hermetically sealed packages SPC controlled wafer fabrication Applications Surveillance Systems Space Radar Instrumentation Electronic Warfare Avionics Military Communications
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DME, DMF, DMJ Series: Silicon Beam-Lead Schottky Mixer Diodes—Singles, Pairs and Quads Bondable and Packaged Chips - DMJ2088-000 - Skyworks Solutions, Inc.
Skyworks Solutions, Inc.
Irvine, CA, United States
DME, DMF, DMJ Series: Silicon Beam-Lead Schottky Mixer Diodes—Singles, Pairs and Quads Bondable and Packaged Chips
DMJ2088-000
DME, DMF, DMJ Series: Silicon Beam-Lead Schottky Mixer Diodes—Singles, Pairs and Quads Bondable and Packaged Chips DMJ2088-000
Skyworks beam-lead silicon Schottky barrier mixer diodes are designed for applications through 40 GHz. The beam-lead design reduces the problem of bonding to the very small area characteristic of the low capacitance junctions. Beam-lead Schottky barrier mixer diodes are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance with a narrow spread of capacitance values for close impedance control. A variety of forward voltages are available, ranging from low values for low, or starved, local oscillator drive levels to high values for high drive, low distortion mixer applications. Beam-lead diodes are available in a wide range of packages. Capacitance ranges and series resistances are comparable with the packaged devices that are available through K-band. Unpackaged diodes are well suited for use in microwave integrated circuits. The packaged devices are designed to be inserted as hybrid elements in strip, transmission line applications. Beam-lead Schottky barrier diodes are categorized by universal mixer applications in four frequency ranges: S, X, Ku and Ka bands. They may also be used as modulators and high-speed switches. Beam-lead diodes are suited for balanced mixers, due to their low parasitics and uniformity. A typical VF vs. IF curve is shown in Figure 1. Typical noise figures vs. LO drive is shown in Figure 2 for single N-type, low drive diode types. Features Low 1/f noise Low intermodulation distortion Epoxy and hermetically sealed packages SPC controlled wafer fabrication Applications Surveillance Systems Space Radar Instrumentation Electronic Warfare Avionics Military Communications

Skyworks beam-lead silicon Schottky barrier mixer diodes are designed for applications through 40 GHz. The beam-lead design reduces the problem of bonding to the very small area characteristic of the low capacitance junctions. Beam-lead Schottky barrier mixer diodes are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance with a narrow spread of capacitance values for close impedance control. A variety of forward voltages are available, ranging from low values for low, or starved, local oscillator drive levels to high values for high drive, low distortion mixer applications. Beam-lead diodes are available in a wide range of packages. Capacitance ranges and series resistances are comparable with the packaged devices that are available through K-band. Unpackaged diodes are well suited for use in microwave integrated circuits. The packaged devices are designed to be inserted as hybrid elements in strip, transmission line applications. Beam-lead Schottky barrier diodes are categorized by universal mixer applications in four frequency ranges: S, X, Ku and Ka bands. They may also be used as modulators and high-speed switches. Beam-lead diodes are suited for balanced mixers, due to their low parasitics and uniformity. A typical VF vs. IF curve is shown in Figure 1. Typical noise figures vs. LO drive is shown in Figure 2 for single N-type, low drive diode types.

Features

    • Low 1/f noise
    • Low intermodulation distortion
    • Epoxy and hermetically sealed packages
    • SPC controlled wafer fabrication

Applications

  • Surveillance Systems
  • Space
  • Radar
  • Instrumentation
  • Electronic Warfare
  • Avionics
  • Military Communications
Supplier's Site Datasheet
RF Schottky Diode - DMJ2088-000 - Richardson RFPD
Richardson RFPD
Geneva, IL, United States
RF Schottky Diode
DMJ2088-000
RF Schottky Diode DMJ2088-000
DME, DMF, DMJ Series: Silicon Beam-Lead Schottky Mixer Diodes—Singles, Pairs and Quads Bondable and Packaged Chips

DME, DMF, DMJ Series: Silicon Beam-Lead Schottky Mixer Diodes—Singles, Pairs and Quads Bondable and Packaged Chips

Supplier's Site Datasheet
Discrete Semiconductor Products - Diodes - RF Diodes - DMJ2088-000 - Acme Chip Technology Co., Limited
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Diodes - RF Diodes
DMJ2088-000
Discrete Semiconductor Products - Diodes - RF Diodes DMJ2088-000
SCHOTTKY BEAMLEAD BRIDGE QUAD

SCHOTTKY BEAMLEAD BRIDGE QUAD

Supplier's Site

Technical Specifications

  Skyworks Solutions, Inc. Richardson RFPD Acme Chip Technology Co., Limited
Product Category Schottky Diodes RF Diodes RF Diodes
Product Number DMJ2088-000 DMJ2088-000 DMJ2088-000
Product Name DME, DMF, DMJ Series: Silicon Beam-Lead Schottky Mixer Diodes—Singles, Pairs and Quads Bondable and Packaged Chips RF Schottky Diode Discrete Semiconductor Products - Diodes - RF Diodes
VF 550 to 650 volts
Diode Type Schottky
Operating Frequency 2000 to 8000 MHz
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