The AS227-000LF/099LF is a high power, pHEMT Single Pole Triple Throw (SP3T) switch. The switch is designed for use in systems operating from 20 MHz to 2.0 GHz for which low loss, high isolation, low control voltage, and chip scale size are required. The device is controlled with positive, negative, or a combination of both voltages. The RF signal paths within the device are fully bilateral. The AS227-000LF/099LF is provided as a bare die in an ultra-compact 1015 x 1015 x 200 μm design. Chips are shipped in quantities of 100 per 2 x 2 inch Gel-Pak (use part number AS227-000LF). For high volume orders, chips can be supplied on a film frame (use part number AS227-099LF).
Features
Broadband frequency range: 20 MHz to 2.0 GHz
Very low insertion loss, 0.5 dB typical @ 0.9 GHz
High isolation: 26 dB typical @ 0.9 GHz
High input power compression: 0.1 dB @ > +37 dBm
Low current consumption: <50 μA @ 3 V
Bare pHEMT die: 1015 x 1015 x 200 μm
Chips supplied on Gel-Pak® or singulated wafers on film frame
The AS227-000LF/099LF is a high power, pHEMT Single Pole Triple Throw (SP3T) switch. The switch is designed for use in systems operating from 20 MHz to 2.0 GHz for which low loss, high isolation, low control voltage, and chip scale size are required.
The device is controlled with positive, negative, or a combination of both voltages. The RF signal paths within the device are fully bilateral.
The AS227-000LF/099LF is provided as a bare die in an ultra-compact 1015 x 1015 x 200 μm design. Chips are shipped in quantities of 100 per 2 x 2 inch Gel-Pak (use part number AS227-000LF). For high volume orders, chips can be supplied on a film frame (use part number AS227-099LF).
Features
- Broadband frequency range: 20 MHz to 2.0 GHz
- Very low insertion loss, 0.5 dB typical @ 0.9 GHz
- High isolation: 26 dB typical @ 0.9 GHz
- High input power compression: 0.1 dB @ > +37 dBm
- Low current consumption: <50 μA @ 3 V
- Bare pHEMT die: 1015 x 1015 x 200 μm
- Chips supplied on Gel-Pak® or singulated wafers on film frame
