Complex type MOSFETs(P+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Complex type MOSFETs(P+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 1278277-US6M11
Manufacturer Homepage: www.rohm.com
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance
ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | Win Source Electronics | |
---|---|---|---|
Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
Product Number | US6M11 | US6M11 | 1278277-US6M11 |
Product Name | 1.5V Drive Nch+Pch MOSFET | 1.5V Drive Nch+Pch MOSFET | TRANSISTORS - Transistors - FETs, MOSFETs - RF - US6M11 |
Polarity | N-Channel; P-Channel | N-Channel; P-Channel | |
V(BR)DSS | 20 volts | 20 volts | |
IDSS | 1500 milliamps | 1500 milliamps | |
PD | 1000 milliwatts | 1000 milliwatts |