ROHM Semiconductor GmbH Nch 40V 80A Power MOSFET RJ1G08CGN

Description
RJ1G08CGN is a power MOSFET with low-on resistance and High power small mold package (LPTL), suitable for switching.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Nch 40V 80A Power MOSFET - RJ1G08CGN - ROHM Semiconductor GmbH
Willich, Germany
Nch 40V 80A Power MOSFET
RJ1G08CGN
Nch 40V 80A Power MOSFET RJ1G08CGN
RJ1G08CGN is a power MOSFET with low-on resistance and High power small mold package (LPTL), suitable for switching.

RJ1G08CGN is a power MOSFET with low-on resistance and High power small mold package (LPTL), suitable for switching.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH
Product Category Power MOSFET
Product Number RJ1G08CGN
Product Name Nch 40V 80A Power MOSFET
Polarity N-Channel
V(BR)DSS 40 volts
IDSS 80000 milliamps
QG 15.7 nC
PD 78000 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products

PNP, TO-252 (DPAK), -120V -3A, Power Transistor - 2SAR587D3 - ROHM Semiconductor GmbH
Specs
PD 10000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
Package Type TO-252 (DPAK); TO-252
View Details
30V Dual Common Drain Pch+Nch Power MOSFET - HS8MA2 - ROHM Semiconductor GmbH
Specs
Polarity N-Channel; P-Channel
V(BR)DSS 30 volts
IDSS 7000 milliamps
View Details
PNP, SOT-323FL, R1≠R2 Leak Absorption Type Digital Transistor (Bias Resistor Built-in Transistor) - DTA014YUB - ROHM Semiconductor GmbH
Specs
Polarity PNP
Package Type UMT3F
Transistor Grade / Operating Range Commercial
View Details
2 suppliers
NPN High gain amplifier Transistor (Darlington) - 2SD2142K - ROHM Semiconductor GmbH
Specs
Polarity NPN
VCEO 30 volts
IC(max) 300 milliamps
View Details
3 suppliers