ROHM Semiconductor GmbH 4.5V Drive Nch MOSFET RF4E080GN

Description
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
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4.5V Drive Nch MOSFET - RF4E080GN - ROHM Semiconductor GmbH
Willich, Germany
4.5V Drive Nch MOSFET
RF4E080GN
4.5V Drive Nch MOSFET RF4E080GN
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Supplier's Site Datasheet
4.5V Drive Nch MOSFET - RF4E080GN - ROHM Semiconductor USA, LLC
Santa Clara, CA, USA
4.5V Drive Nch MOSFET
RF4E080GN
4.5V Drive Nch MOSFET RF4E080GN
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH ROHM Semiconductor USA, LLC
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number RF4E080GN RF4E080GN
Product Name 4.5V Drive Nch MOSFET 4.5V Drive Nch MOSFET
Polarity N-Channel N-Channel
V(BR)DSS 30 volts 30 volts
IDSS 8000 milliamps 8000 milliamps
PD 2000 milliwatts 2000 milliwatts
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