ROHM Semiconductor GmbH 650V 35A, TO-220AB, High-speed switching Power MOSFET R6535KNX3

Description
The R6xxxKNx series are high-speed switching products, Super Junction MOSFETs, that place an emphasis on high efficiency. This series products achieve higher efficiency via high-speed switching. High-speed switching makes it possible to contribute to higher efficiency in PFC and LLC circuits.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
650V 35A, TO-220AB, High-speed switching Power MOSFET - R6535KNX3 - ROHM Semiconductor GmbH
Willich, Germany
650V 35A, TO-220AB, High-speed switching Power MOSFET
R6535KNX3
650V 35A, TO-220AB, High-speed switching Power MOSFET R6535KNX3
The R6xxxKNx series are high-speed switching products, Super Junction MOSFETs, that place an emphasis on high efficiency. This series products achieve higher efficiency via high-speed switching. High-speed switching makes it possible to contribute to higher efficiency in PFC and LLC circuits.

The R6xxxKNx series are high-speed switching products, Super Junction MOSFETs, that place an emphasis on high efficiency. This series products achieve higher efficiency via high-speed switching. High-speed switching makes it possible to contribute to higher efficiency in PFC and LLC circuits.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH
Product Category Power MOSFET
Product Number R6535KNX3
Product Name 650V 35A, TO-220AB, High-speed switching Power MOSFET
Polarity N-Channel
V(BR)DSS 650 volts
IDSS 35000 milliamps
QG 72 nC
PD 370000 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products

600V 4A TO-252, Low-noise Power MOSFET - R6004END3 - ROHM Semiconductor GmbH
Specs
Polarity N-Channel
V(BR)DSS 600 volts
IDSS 4000 milliamps
View Details
NPN, SOT-323, 30V 0.5A, General Purpose Transistor for Automotive - 2SCR502U3HZG - ROHM Semiconductor GmbH
Specs
Polarity NPN
Package Type UMT3
Transistor Grade / Operating Range Commercial
View Details
600V IGBT Intelligent Power Module (IPM) - BM63575S-VA - ROHM Semiconductor GmbH
Specs
TJ -40 to 125 C (-40 to 257 F)
Package Type HSDIP25
Packing Method Tube
View Details
1200V, 300A, Half bridge, Full SiC-Power Module with Trench MOSFET - BSM300D12P3E005 - ROHM Semiconductor GmbH
Specs
V(BR)DSS 1200 volts
IDSS 300000 milliamps
PD 1.26E6 milliwatts
View Details
4 suppliers