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BSM300C12P3E201 is a SiC (silicon carbide) power module with Low surge and low switching loss, suitable for motor drive, converter, photovoltaics, wind power generation.
BSM300C12P3E201 is a SiC (silicon carbide) power module with Low surge and low switching loss, suitable for motro drive, converter, photovoltaics, wind power generation.
SICFET N-CH 1200V 300A MODULE
N-Channel 1200V 300A (Tc) 1360W (Tc) Chassis Mount Module
SIC MOSFET, N CHANNEL, 1.2KV, 300A ROHS COMPLIANT: YES
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | Shenzhen Shengyu Electronics Technology Limited | DigiKey | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Power MOSFET | Power MOSFET | RF Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BSM300C12P3E201 | BSM300C12P3E201 | BSM300C12P3E201 | 846-BSM300C12P3E201-ND | 88AH6163 |
| Product Name | 1200V, 300A, Boost Chopper, Full SiC-Power Module with Trench MOSFET | SiC Power Module | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | Sic Mosfet, N Channel, 1.2Kv, 300A Rohs Compliant Rohm |
| V(BR)DSS | 1200 volts | 1200 volts | |||
| IDSS | 300000 milliamps | 300000 milliamps | |||
| PD | 1.36E6 milliwatts | 1.36E6 milliwatts | |||
| TJ | -40 to 125 C (-40 to 257 F) | -40 to 125 C (-40 to 257 F) | |||
| Package Type | E | Module | Module | TO-3 |
