- Trained on our vast library of engineering resources.

Qorvo 750 V, 58 mohm SiC FET UJ4C075060L8S

Description
The UJ4C075060L8S is a 750V, 58 mohm G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the space-saving MO-229 package which enables automated assembly, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
750 V, 58 mohm SiC FET - UJ4C075060L8S - Qorvo
Greensboro, NC, United States
750 V, 58 mohm SiC FET
UJ4C075060L8S
750 V, 58 mohm SiC FET UJ4C075060L8S
The UJ4C075060L8S is a 750V, 58 mohm G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the space-saving MO-229 package which enables automated assembly, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.

The UJ4C075060L8S is a 750V, 58 mohm G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the space-saving MO-229 package which enables automated assembly, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.

Supplier's Site Datasheet

Technical Specifications

  Qorvo
Product Category RF Transistors
Product Number UJ4C075060L8S
Product Name 750 V, 58 mohm SiC FET
Transistor Technology / Material 750 V, 58 mohm SiC FET
Unlock Full Specs
to access all available technical data

Similar Products

DC - 12 GHz, 20 Watt, 32 V GaN RF Transistor - TGF2978-SM - Qorvo
Specs
Transistor Technology / Material GaN
Transistor Grade / Operating Range Military
Package Type QFN
View Details
2 suppliers
750 V, 5.9 mohm SiC FET - UJ4SC075006K4S - Qorvo
Specs
Transistor Technology / Material 750 V, 5.9 mohm SiC FET
Transistor Grade / Operating Range Military
Package Type TO-247-4L
View Details
4 suppliers
Specs
Package Type TO-247; TO-247-3
Packing Method Tube; Tube
View Details
DC - 25 GHz, 7 Watt, 28 V GaN RF Transistor - TGF2933 - Qorvo
Specs
Transistor Technology / Material GaN
Transistor Grade / Operating Range Military
Package Type die
View Details