Qorvo 750 V, 44 mohm SiC FET UJ4C075044L8S

Description
The UJ4C075044L8S is a 750V, 44 mohm G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the space-saving MO-229 package which enables automated assembly, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive. AEC-Q101 qualification in process. Please contact Sales for more information.
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750 V, 44 mohm SiC FET - UJ4C075044L8S - Qorvo
Greensboro, NC, United States
750 V, 44 mohm SiC FET
UJ4C075044L8S
750 V, 44 mohm SiC FET UJ4C075044L8S
The UJ4C075044L8S is a 750V, 44 mohm G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the space-saving MO-229 package which enables automated assembly, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive. AEC-Q101 qualification in process. Please contact Sales for more information.

The UJ4C075044L8S is a 750V, 44 mohm G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the space-saving MO-229 package which enables automated assembly, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.

AEC-Q101 qualification in process. Please contact Sales for more information.

Supplier's Site Datasheet
Single FETs, MOSFETs - 2312-UJ4C075044L8S-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
2312-UJ4C075044L8S-ND
Single FETs, MOSFETs 2312-UJ4C075044L8S-ND
750V/44MO,SICFET,G4, TOLL

750V/44MO,SICFET,G4,TOLL

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Technical Specifications

  Qorvo DigiKey
Product Category RF Transistors Transistors
Product Number UJ4C075044L8S 2312-UJ4C075044L8S-ND
Product Name 750 V, 44 mohm SiC FET Single FETs, MOSFETs
Transistor Technology / Material 750 V, 44 mohm SiC FET Silicon Carbide
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