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Qorvo 750 V, 33 mohm SiC FET UJ4C075033L8S

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750 V, 33 mohm SiC FET - UJ4C075033L8S - Qorvo
Greensboro, NC, United States
750 V, 33 mohm SiC FET
UJ4C075033L8S
750 V, 33 mohm SiC FET UJ4C075033L8S
The UJ4C075033L8S is a 750V, 33 mohm G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the space-saving MO-229 package which enables automated assembly, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive. AEC-Q101 qualification in process. Please contact Sales for more information.

The UJ4C075033L8S is a 750V, 33 mohm G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the space-saving MO-229 package which enables automated assembly, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.

AEC-Q101 qualification in process. Please contact Sales for more information.

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Technical Specifications

  Qorvo
Product Category RF Transistors
Product Number UJ4C075033L8S
Product Name 750 V, 33 mohm SiC FET
Transistor Technology / Material 750 V, 33 mohm SiC FET
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