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Qorvo 1200 V, 72 mohm SiC FET UF4C120070B7S

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1200 V, 72 mohm SiC FET - UF4C120070B7S - Qorvo
Greensboro, NC, United States
1200 V, 72 mohm SiC FET
UF4C120070B7S
1200 V, 72 mohm SiC FET UF4C120070B7S
The UF4C120070B7S is a 1200V, 72mohm G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the space-saving D2 PAK-7L package which enables automated assembly, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive. AEC-Q101 Qualified

The UF4C120070B7S is a 1200V, 72mohm G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the space-saving D2 PAK-7L package which enables automated assembly, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.

AEC-Q101 Qualified

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Technical Specifications

  Qorvo
Product Category RF Transistors
Product Number UF4C120070B7S
Product Name 1200 V, 72 mohm SiC FET
Transistor Technology / Material 1200 V, 72 mohm SiC FET
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