Qorvo 1200 V, 53 mohm SiC FET UF4C120053K3S

Description
The UF4C120053K3S is a 1200 V, 53 mohm RDS(on) Gen 4 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the TO-247-3L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive. AEC-Q101 qualification in process. Please contact Sales for more information.
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Suppliers

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Product
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1200 V, 53 mohm SiC FET - UF4C120053K3S - Qorvo
Greensboro, NC, United States
1200 V, 53 mohm SiC FET
UF4C120053K3S
1200 V, 53 mohm SiC FET UF4C120053K3S
The UF4C120053K3S is a 1200 V, 53 mohm RDS(on) Gen 4 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the TO-247-3L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive. AEC-Q101 qualification in process. Please contact Sales for more information.

The UF4C120053K3S is a 1200 V, 53 mohm RDS(on) Gen 4 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the TO-247-3L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.

AEC-Q101 qualification in process. Please contact Sales for more information.

Supplier's Site Datasheet
Single FETs, MOSFETs - 2312-UF4C120053K3S-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
2312-UF4C120053K3S-ND
Single FETs, MOSFETs 2312-UF4C120053K3S-ND
N-Channel 1.2V 34A (Tc) 263W (Tc) Through Hole TO-247-3

N-Channel 1.2V 34A (Tc) 263W (Tc) Through Hole TO-247-3

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Technical Specifications

  Qorvo DigiKey
Product Category RF Transistors Transistors
Product Number UF4C120053K3S 2312-UF4C120053K3S-ND
Product Name 1200 V, 53 mohm SiC FET Single FETs, MOSFETs
Transistor Technology / Material 1200 V, 53 mohm SiC FET
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