The QPD1035L is a 40W discrete GaN on SiC HEMT transistor operating from DC to 6 GHz from a 50V supply rail. The device has an input pre-match and is ideally suitable for broadband amplifier applications for pulsed and CW operation. Lead free and RoHS compliant.
Gain, P3dB, and Drain Efficiency values - typical EVB performance at 5.65 GHz.
| Qorvo | |
|---|---|
| Product Category | Power Amplifiers |
| Product Number | QPD1035L |
| Product Name | DC - 6 GHz, 40 Watt, 50 Volt GaN RF Power Transistor |
