Qorvo 27.5 – 31.0 GHz 10 W GaN Power Amplifier QPA2215D

Description
Qorvo's QPA2215D is a Ka-band power amplifier fabricated on Qorvo's 0.15um GaN on SiC process (QGaN15). Operating from 27.5 to 31.0 GHz, it achieves 2.5 W linear power with lower than −25 dBc intermodulation distortion products and 24.8 dB small signal gain. Saturated output power is greater than 40 dBm (10 W) with an associated power-added efficiency of 22.6 %. QPA2215D is ideally suited to support satellite communications and 5G infrastructure. To simplify system integration, the QPA2215D is fully matched to 50 ohms with integrated DC blocking caps on both I/O ports. The QPA2215D is 100% DC and RF tested on-wafer to ensure compliance to electrical specifications. Lead-free and RoHS compliant.
  • 27.5 – 31.0 GHz 10 W GaN Power Amplifier - QPA2215D - Qorvo
    Qorvo
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Description
Qorvo's QPA2215D is a Ka-band power amplifier fabricated on Qorvo's 0.15um GaN on SiC process (QGaN15). Operating from 27.5 to 31.0 GHz, it achieves 2.5 W linear power with lower than −25 dBc intermodulation distortion products and 24.8 dB small signal gain. Saturated output power is greater than 40 dBm (10 W) with an associated power-added efficiency of 22.6 %. QPA2215D is ideally suited to support satellite communications and 5G infrastructure. To simplify system integration, the QPA2215D is fully matched to 50 ohms with integrated DC blocking caps on both I/O ports. The QPA2215D is 100% DC and RF tested on-wafer to ensure compliance to electrical specifications. Lead-free and RoHS compliant.
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27.5 – 31.0 GHz 10 W GaN Power Amplifier - QPA2215D - Qorvo
Qorvo
Greensboro, NC, United States
27.5 – 31.0 GHz 10 W GaN Power Amplifier
QPA2215D
27.5 – 31.0 GHz 10 W GaN Power Amplifier QPA2215D
Qorvo's QPA2215D is a Ka-band power amplifier fabricated on Qorvo's 0.15um GaN on SiC process (QGaN15). Operating from 27.5 to 31.0 GHz, it achieves 2.5 W linear power with lower than −25 dBc intermodulation distortion products and 24.8 dB small signal gain. Saturated output power is greater than 40 dBm (10 W) with an associated power-added efficiency of 22.6 %. QPA2215D is ideally suited to support satellite communications and 5G infrastructure. To simplify system integration, the QPA2215D is fully matched to 50 ohms with integrated DC blocking caps on both I/O ports. The QPA2215D is 100% DC and RF tested on-wafer to ensure compliance to electrical specifications. Lead-free and RoHS compliant.

Qorvo's QPA2215D is a Ka-band power amplifier fabricated on Qorvo's 0.15um GaN on SiC process (QGaN15). Operating from 27.5 to 31.0 GHz, it achieves 2.5 W linear power with lower than −25 dBc intermodulation distortion products and 24.8 dB small signal gain. Saturated output power is greater than 40 dBm (10 W) with an associated power-added efficiency of 22.6 %.

QPA2215D is ideally suited to support satellite communications and 5G infrastructure.

To simplify system integration, the QPA2215D is fully matched to 50 ohms with integrated DC blocking caps on both I/O ports.

The QPA2215D is 100% DC and RF tested on-wafer to ensure compliance to electrical specifications.

Lead-free and RoHS compliant.

Supplier's Site Datasheet

Technical Specifications

  Qorvo
Product Category Power Operational Amplifiers
Product Number QPA2215D
Product Name 27.5 – 31.0 GHz 10 W GaN Power Amplifier
Standards and Certifications RoHS
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