NPN/NPN resistor-equipped double transistor (RET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package.
NPN/PNP complement: PEMD10
PNP/PNP complement: PEMB10
Features and benefits
Applications
NEXPERIA PEMH10 - SMALL SIGNAL B
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount SOT-666
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount SOT-666
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount SOT-666
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
PEMH10; PUMH10 - NPN/NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ SOT 6-Pin Product overview: PEMH10,115 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-PEMH10,115 can be used for catalog matching and distributor lookup.
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1036325-PEMH10,115
Packaging: Cut Reel
Mounting: SMD (SMT)
Transistor Polarity: 2 NPN - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 47k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SOT-666
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 100mV @ 250μA, 5mA
Collector Cut-off Current(Max): 1μA
Typical Gain (hFE) (Min): 100 @ 100mA, 5V
Maximum Power Dissipation: 300mW
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Limited
TRANS, AEC-Q101, DUAL NPN, 50V, SOT-666; Digital Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:2.2kohm; Base-Emitter Resistor R2:47kohm; Resistor RoHS Compliant: Yes
TRANS PREBIAS 2NPN 50V SOT666
| Nexperia B.V. | ODG (Origin Data Global) | DigiKey | Rochester Electronics | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Transistors | Bipolar RF Transistors |
| Product Number | PEMH10,115 | PEMH10,115 | 1727-1723-1-ND | PEMH10,115 | 293-PEMH10,115 | 1036325-PEMH10,115 | 32AC8166 | PEMH10,115 |
| Product Name | 50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 2.2 kΩ, R2 = 47 kΩ | Single Bipolar Transistors | Bipolar Transistor Arrays, Pre-Biased | Bipolar Transistor | TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - PEMH10,115 | Trans, Aec-Q101, Dual Npn, 50V, Sot-666; Digital Transistor Polarity Nexperia | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | |
| Polarity | NPN | 2 NPN - Pre-Biased (Dual); NPN | NPN | NPN | NPN; 2 NPN - Pre-Biased (Dual) | NPN | ||
| Package Type | SOT666 | SOT-563, SOT-666 | SOT-563, SOT-666 | SOT666 | SOT3; SOT-666 | TO-3 | ||
| IC(max) | 100 milliamps | 100 milliamps | ||||||
| VCEO | 50 volts | 50 volts |
