Nexperia B.V. 50 V, 500 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ PDTD114ETR

NPN Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package.

PNP complement: PDTB114ET

Features and benefits

• 500 mA output current capability
• Built-in bias resistors
• Simplifies circuit design
• Reduces component count
• ± 10 % resistor ratio tolerance
• High temperature applications up to 175 °C

Applications

• IC inputs control
• Cost-saving alternative to BC807 series transistors in digital applications
• Switching loads

PDTD1xxxT series - 500 mA, 50 V NPN resistor-equipped transistors TO-236 3-Pin Product overview: PDTD114ETR from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500 mA, 50 V. Search-friendly keywords include transistor, BJT, switching, amplification, 500 mA, 50 V, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-PDTD114ETR can be used for catalog matching and distributor lookup.

Win Source Part Number: 1112033-PDTD114ETR
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Power - Max: 320 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Frequency - Transition: 225 MHz
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB
Alternative Parts (Cross-Reference): 934031040215;
ECCN: EAR99
Fake Threat In the Open Market: 84 pct.
MSL Level: 1 (Unlimited)
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
REACH Status: REACH Unaffected
HTSUS: 8541.21.0075
Mfr: Nexperia USA Inc.
Other Names: 1727-7552-2,1727-7552-1,1727-7552-6,934031040215,PDTD114ETR-ND
Base Product Number: PDTD114

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 500mA 225MHz 320mW Surface Mount TO-236AB

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 500mA 225MHz 320mW Surface Mount TO-236AB

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 500mA 225MHz 320mW Surface Mount TO-236AB

TRANS PREBIAS NPN 0.425W

Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB