Nexperia B.V. 50 V, 500 mA PNP resistor-equipped transistor PDTB114ETR

Description
PNP Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: PDTD114ET Features and benefits 500 mA output current capability Built-in bias resistors Simplifies circuit design Reduces component count ±10 % resistor ratio tolerance High temperature applications up to 175 °C AEC-Q101 qualified Applications Cost-saving alternative for BC807 series in digital applications Control of IC inputs Switching loads
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Description
PNP Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: PDTD114ET Features and benefits 500 mA output current capability Built-in bias resistors Simplifies circuit design Reduces component count ±10 % resistor ratio tolerance High temperature applications up to 175 °C AEC-Q101 qualified Applications Cost-saving alternative for BC807 series in digital applications Control of IC inputs Switching loads
Request a Quote
Datasheet
Datasheet Summary
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PNP Resistor-Equipped Transistor (RET) in a small SOT23 surface-mounted package measuring 2.9 mm x 1.3 mm x 1 mm, with a 1.9 mm pin pitch. It supports a maximum collector-emitter voltage of -50 V and an output current of -500 mA. Built-in bias resistors have a ratio tolerance of ±10 % and a nominal input resistor value of 10 kΩ at 25 °C. The device operates with a junction temperature up to 175 °C and is AEC-Q101 qualified. Total power dissipation is 320 mW on a single-sided FR4 PCB and 460 mW on a 4-layer FR4 PCB.

Datasheet Summary
Powered by GS/AI

PNP Resistor-Equipped Transistor (RET) in a small SOT23 surface-mounted package measuring 2.9 mm x 1.3 mm x 1 mm, with a 1.9 mm pin pitch. It supports a maximum collector-emitter voltage of -50 V and an output current of -500 mA. Built-in bias resistors have a ratio tolerance of ±10 % and a nominal input resistor value of 10 kΩ at 25 °C. The device operates with a junction temperature up to 175 °C and is AEC-Q101 qualified. Total power dissipation is 320 mW on a single-sided FR4 PCB and 460 mW on a 4-layer FR4 PCB.

Suppliers

Company
Product
Description
Supplier Links
50 V, 500 mA PNP resistor-equipped transistor - PDTB114ETR - Nexperia B.V.
Nijmegen, Netherlands
50 V, 500 mA PNP resistor-equipped transistor
PDTB114ETR
50 V, 500 mA PNP resistor-equipped transistor PDTB114ETR
PNP Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: PDTD114ET Features and benefits 500 mA output current capability Built-in bias resistors Simplifies circuit design Reduces component count ±10 % resistor ratio tolerance High temperature applications up to 175 °C AEC-Q101 qualified Applications Cost-saving alternative for BC807 series in digital applications Control of IC inputs Switching loads

PNP Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package.

NPN complement: PDTD114ET

Features and benefits

  • 500 mA output current capability
  • Built-in bias resistors
  • Simplifies circuit design
  • Reduces component count
  • ±10 % resistor ratio tolerance
  • High temperature applications up to 175 °C
  • AEC-Q101 qualified

Applications

  • Cost-saving alternative for BC807 series in digital applications
  • Control of IC inputs
  • Switching loads
Supplier's Site Datasheet
 - PDTB114ETR - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB

Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB

Supplier's Site Datasheet
Singapore, Singapore
500 mA 50 V Bipolar Transistor
292-PDTB114ETR
500 mA 50 V Bipolar Transistor 292-PDTB114ETR
PDTB1xxxT series - 500 mA, 50 V PNP resistor-equipped transistors TO-236 3-Pin Product overview: PDTB114ETR from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500 mA, 50 V. Search-friendly keywords include transistor, BJT, switching, amplification, 500 mA, 50 V, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-PDTB114ETR can be used for catalog matching and distributor lookup.

PDTB1xxxT series - 500 mA, 50 V PNP resistor-equipped transistors TO-236 3-Pin Product overview: PDTB114ETR from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500 mA, 50 V. Search-friendly keywords include transistor, BJT, switching, amplification, 500 mA, 50 V, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-PDTB114ETR can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - 1325627-PDTB114ETR - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased
1325627-PDTB114ETR
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased 1325627-PDTB114ETR
Manufacturer: Nexperia USA Inc. Win Source Part Number: 1325627-PDTB114ETR Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased Packaging: Reel - TR Standard Package: 3,000 Mounting: Surface Mount Power - Max: 320 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 500 mA Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Frequency - Transition: 140 MHz Supplier Device Package: TO-236AB Case / Package: TO-236-3, SC-59, SOT-23-3 ECCN: EAR99 Fake Threat In the Open Market: 65 MSL Level: 1 (Unlimited) Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms REACH Status: REACH Unaffected HTSUS: 8541.21.0075 Other Part Number: 1727-8163-2,1727-816 3-1,PDTB114ETR-ND,17 27-8163-6,9340310902 15 Base Product Number: PDTB114 RoHS Status: ROHS3 Compliant

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1325627-PDTB114ETR
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Packaging: Reel - TR
Standard Package: 3,000
Mounting: Surface Mount
Power - Max: 320 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Frequency - Transition: 140 MHz
Supplier Device Package: TO-236AB
Case / Package: TO-236-3, SC-59, SOT-23-3
ECCN: EAR99
Fake Threat In the Open Market: 65
MSL Level: 1 (Unlimited)
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
REACH Status: REACH Unaffected
HTSUS: 8541.21.0075
Other Part Number: 1727-8163-2,1727-8163-1,PDTB114ETR-ND,1727-8163-6,934031090215
Base Product Number: PDTB114
RoHS Status: ROHS3 Compliant

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - 1727-8163-6-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
1727-8163-6-ND
Single, Pre-Biased Bipolar Transistors 1727-8163-6-ND
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 500mA 140MHz 320mW Surface Mount TO-236AB

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 500mA 140MHz 320mW Surface Mount TO-236AB

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - 1727-8163-1-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
1727-8163-1-ND
Single, Pre-Biased Bipolar Transistors 1727-8163-1-ND
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 500mA 140MHz 320mW Surface Mount TO-236AB

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 500mA 140MHz 320mW Surface Mount TO-236AB

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - 1727-8163-2-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
1727-8163-2-ND
Single, Pre-Biased Bipolar Transistors 1727-8163-2-ND
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 500mA 140MHz 320mW Surface Mount TO-236AB

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 500mA 140MHz 320mW Surface Mount TO-236AB

Buy Now Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - Pre-Biased
PDTB114ETR
Bipolar Transistors - Pre-Biased PDTB114ETR
Bipolar Transistors - Pre-Biased 500 mA, 50 V PNP resistor-equipped

Bipolar Transistors - Pre-Biased 500 mA, 50 V PNP resistor-equipped

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PDTB114ETR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
PDTB114ETR
Discrete Semiconductor Products - Transistors - Bipolar (BJT) PDTB114ETR
TRANS PREBIAS PNP 50V TO236AB

TRANS PREBIAS PNP 50V TO236AB

Supplier's Site
Rf Transistor, Pnp, 50V, 0.5A, To-236Ab Rohs Compliant Nexperia - 74AH1052 - Newark, An Avnet Company
Chicago, IL, United States
Rf Transistor, Pnp, 50V, 0.5A, To-236Ab Rohs Compliant Nexperia
74AH1052
Rf Transistor, Pnp, 50V, 0.5A, To-236Ab Rohs Compliant Nexperia 74AH1052
RF TRANSISTOR, PNP, 50V, 0.5A, TO-236AB ROHS COMPLIANT: YES

RF TRANSISTOR, PNP, 50V, 0.5A, TO-236AB ROHS COMPLIANT: YES

Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V. Rochester Electronics ERSAELECTRONICS PTE. LTD. Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors RF Transistors
Product Number PDTB114ETR PDTB114ETR 292-PDTB114ETR 1325627-PDTB114ETR 1727-8163-6-ND PDTB114ETR PDTB114ETR 74AH1052
Product Name 50 V, 500 mA PNP resistor-equipped transistor 500 mA 50 V Bipolar Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Single, Pre-Biased Bipolar Transistors Bipolar Transistors - Pre-Biased Discrete Semiconductor Products - Transistors - Bipolar (BJT) Rf Transistor, Pnp, 50V, 0.5A, To-236Ab Rohs Compliant Nexperia
Package Type SOT23; SOT23 SOT23 SOT23 SOT3; SOT23; TO-236-3, SC-59, SOT-23-3 SOT23; TO-236-3, SC-59, SOT-23-3 SOT23; TO-236-3, SC-59, SOT-23-3 TO-3
Polarity PNP PNP PNP PNP
Packing Method Tape Reel; Tape & Reel Tape Reel; Reel - TR Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
IC(max) 500 milliamps 500 milliamps
Power Gain 70 dB
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