Nexperia B.V. PNP resistor-equipped transistor; R1 = 100 kΩ, R2 = open PDTA115TMB,315

Description
PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC115TMB. Features and benefits 100 mA output current capability Reduces component count Built-in bias resistors Reduces pick and place costs Simplifies circuit design Leadless ultra small SMD plastic package Low package height of 0.37 mm AEC-Q101 qualified Applications Low-current peripheral driver Control of IC inputs Replaces general-purpose transistors in digital applications Mobile applications
  • PNP resistor-equipped transistor; R1 = 100 kΩ, R2 = open - PDTA115TMB,315 - Nexperia B.V.
    Nexperia B.V.
  • PDTA115TMB,315 - Rochester Electronics
    Rochester Electronics
  • Single, Pre-Biased Bipolar Transistors - PDTA115TMB,315-ND - DigiKey
    DigiKey
  • Rf Transistor Rohs Compliant Nexperia - 29AK3031 - Newark, An Avnet Company
    Newark, An Avnet Company
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Description
PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC115TMB. Features and benefits 100 mA output current capability Reduces component count Built-in bias resistors Reduces pick and place costs Simplifies circuit design Leadless ultra small SMD plastic package Low package height of 0.37 mm AEC-Q101 qualified Applications Low-current peripheral driver Control of IC inputs Replaces general-purpose transistors in digital applications Mobile applications
Request a Quote
Datasheet
Datasheet Summary
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PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package with body dimensions of 1.0 x 0.6 x 0.37 mm and a maximum package height of 0.37 mm. It has a collector-emitter voltage rating of -50 V, a maximum output current of -100 mA, and a total power dissipation of 250 mW at 25°C ambient temperature. The built-in bias resistor R1 has a value of 100 kΩ with a tolerance range of 70 to 130 kΩ at 25°C. The device is AEC-Q101 qualified and suitable for automotive applications.

Datasheet Summary
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PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package with body dimensions of 1.0 x 0.6 x 0.37 mm and a maximum package height of 0.37 mm. It has a collector-emitter voltage rating of -50 V, a maximum output current of -100 mA, and a total power dissipation of 250 mW at 25°C ambient temperature. The built-in bias resistor R1 has a value of 100 kΩ with a tolerance range of 70 to 130 kΩ at 25°C. The device is AEC-Q101 qualified and suitable for automotive applications.

Suppliers

Company
Product
Description
Supplier Links
PNP resistor-equipped transistor; R1 = 100 kΩ, R2 = open - PDTA115TMB,315 - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
PNP resistor-equipped transistor; R1 = 100 kΩ, R2 = open
PDTA115TMB,315
PNP resistor-equipped transistor; R1 = 100 kΩ, R2 = open PDTA115TMB,315
PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC115TMB. Features and benefits 100 mA output current capability Reduces component count Built-in bias resistors Reduces pick and place costs Simplifies circuit design Leadless ultra small SMD plastic package Low package height of 0.37 mm AEC-Q101 qualified Applications Low-current peripheral driver Control of IC inputs Replaces general-purpose transistors in digital applications Mobile applications

PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC115TMB.

Features and benefits

  • 100 mA output current capability
  • Reduces component count
  • Built-in bias resistors
  • Reduces pick and place costs
  • Simplifies circuit design
  • Leadless ultra small SMD plastic package
  • Low package height of 0.37 mm
  • AEC-Q101 qualified

Applications

  • Low-current peripheral driver
  • Control of IC inputs
  • Replaces general-purpose transistors in digital applications
  • Mobile applications
Supplier's Site Datasheet
- PDTA115TMB,315 - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
PDTA115TMB,315
PDTA115TMB,315
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon

Supplier's Site Datasheet
Single, Pre-Biased Bipolar Transistors - PDTA115TMB,315-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
PDTA115TMB,315-ND
Single, Pre-Biased Bipolar Transistors PDTA115TMB,315-ND
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 180MHz 250mW Surface Mount DFN1006B-3

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 180MHz 250mW Surface Mount DFN1006B-3

Buy Now Datasheet
Rf Transistor Rohs Compliant Nexperia - 29AK3031 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Rf Transistor Rohs Compliant Nexperia
29AK3031
Rf Transistor Rohs Compliant Nexperia 29AK3031
RF TRANSISTOR ROHS COMPLIANT: YES

RF TRANSISTOR ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Nexperia B.V. Rochester Electronics DigiKey Newark, An Avnet Company
Product Category Transistors Bipolar RF Transistors Transistors RF Transistors
Product Number PDTA115TMB,315 PDTA115TMB,315 PDTA115TMB,315-ND 29AK3031
Product Name PNP resistor-equipped transistor; R1 = 100 kΩ, R2 = open Single, Pre-Biased Bipolar Transistors Rf Transistor Rohs Compliant Nexperia
Package Type SOT883B SOT883B SOT883B 3-XFDFN TO-3
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