Nexperia B.V. 30 V, 2 A PNP/PNP low VCEsat double transistor PBSS5230PAP,115

Description
PNP/PNP low VCEsat double transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4230PANP NPN/NPN complement: PBSS4230PAN Features and benefits Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC Reduced Printed-Circuit Board (PCB) requirements High energy efficiency due to less heat generation Applications Load switch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)
Request a Quote Datasheet
Description
PNP/PNP low VCEsat double transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4230PANP NPN/NPN complement: PBSS4230PAN Features and benefits Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC Reduced Printed-Circuit Board (PCB) requirements High energy efficiency due to less heat generation Applications Load switch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
30 V, 2 A PNP/PNP low VCEsat double transistor - PBSS5230PAP,115 - Nexperia B.V.
Nijmegen, Netherlands
30 V, 2 A PNP/PNP low VCEsat double transistor
PBSS5230PAP,115
30 V, 2 A PNP/PNP low VCEsat double transistor PBSS5230PAP,115
PNP/PNP low VCEsat double transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4230PANP NPN/NPN complement: PBSS4230PAN Features and benefits Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC Reduced Printed-Circuit Board (PCB) requirements High energy efficiency due to less heat generation Applications Load switch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)

PNP/PNP low VCEsat double transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

NPN/PNP complement: PBSS4230PANP

NPN/NPN complement: PBSS4230PAN

Features and benefits

  • Very low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain hFE at high IC
  • Reduced Printed-Circuit Board (PCB) requirements
  • High energy efficiency due to less heat generation

Applications

  • Load switch
  • Battery-driven devices
  • Power management
  • Charging circuits
  • Power switches (e.g. motors, fans)
Supplier's Site Datasheet
Bipolar Transistor Arrays - 1727-PBSS5230PAP,115TR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
1727-PBSS5230PAP,115TR-ND
Bipolar Transistor Arrays 1727-PBSS5230PAP,115TR-ND
Bipolar (BJT) Transistor Array 2 PNP (Dual) 30V 2A 95MHz 510mW Surface Mount 6-HUSON (2x2)

Bipolar (BJT) Transistor Array 2 PNP (Dual) 30V 2A 95MHz 510mW Surface Mount 6-HUSON (2x2)

Buy Now Datasheet
Bipolar Transistor Arrays - 1727-PBSS5230PAP,115CT-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
1727-PBSS5230PAP,115CT-ND
Bipolar Transistor Arrays 1727-PBSS5230PAP,115CT-ND
Bipolar (BJT) Transistor Array 2 PNP (Dual) 30V 2A 95MHz 510mW Surface Mount 6-HUSON (2x2)

Bipolar (BJT) Transistor Array 2 PNP (Dual) 30V 2A 95MHz 510mW Surface Mount 6-HUSON (2x2)

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Arrays - PBSS5230PAP,115 - 1086508-PBSS5230PAP,115 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays - PBSS5230PAP,115
1086508-PBSS5230PAP,115
TRANSISTORS - Transistors (BJT) - Arrays - PBSS5230PAP,115 1086508-PBSS5230PAP,115
Manufacturer: Nexperia USA Inc. Win Source Part Number: 1086508-PBSS5230PAP, 115 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 95MHz Transistor Polarity: 2 PNP (Dual) Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: DFN2020-6 Maximum Current Collector: 2A VCEO Maximum Collector-Emitter Breakdown Voltage: 30V Max Vce (sat): 420mv @ 100mA, 2A Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 160 @ 1A, 2V Maximum Power Dissipation: 510mW Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Sufficient

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1086508-PBSS5230PAP,115
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 95MHz
Transistor Polarity: 2 PNP (Dual)
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: DFN2020-6
Maximum Current Collector: 2A
VCEO Maximum Collector-Emitter Breakdown Voltage: 30V
Max Vce (sat): 420mv @ 100mA, 2A
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 160 @ 1A, 2V
Maximum Power Dissipation: 510mW
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
 - PBSS5230PAP,115 - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 2A I(C), PNP

Small Signal Bipolar Transistor, 2A I(C), PNP

Supplier's Site Datasheet
Singapore, Singapore
30 V 2 A DFN Bipolar Transistor
277-PBSS5230PAP,115
30 V 2 A DFN Bipolar Transistor 277-PBSS5230PAP,115
PBSS5230PAP - 30 V, 2 A PNP/PNP low VCEsat (BISS) transistor DFN 6-Pin Product overview: PBSS5230PAP,115 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30 V, 2 A, DFN. Search-friendly keywords include transistor, BJT, switching, amplification, 30 V, 2 A, DFN, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-PBSS5230PAP,115 can be used for catalog matching and distributor lookup.

PBSS5230PAP - 30 V, 2 A PNP/PNP low VCEsat (BISS) transistor DFN 6-Pin Product overview: PBSS5230PAP,115 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30 V, 2 A, DFN. Search-friendly keywords include transistor, BJT, switching, amplification, 30 V, 2 A, DFN, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-PBSS5230PAP,115 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Bipolar (Bjt) Single Transistor, Dual Pnp, -30 V, 95 Mhz, 2 W, -2 A, 100 Rohs Compliant Nexperia - 67W0128 - Newark, An Avnet Company
Chicago, IL, United States
Bipolar (Bjt) Single Transistor, Dual Pnp, -30 V, 95 Mhz, 2 W, -2 A, 100 Rohs Compliant Nexperia
67W0128
Bipolar (Bjt) Single Transistor, Dual Pnp, -30 V, 95 Mhz, 2 W, -2 A, 100 Rohs Compliant Nexperia 67W0128
Bipolar (BJT) Single Transistor, Dual PNP, -30 V, 95 MHz, 2 W, -2 A, 100 RoHS Compliant: Yes

Bipolar (BJT) Single Transistor, Dual PNP, -30 V, 95 MHz, 2 W, -2 A, 100 RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PBSS5230PAP,115 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
PBSS5230PAP,115
Discrete Semiconductor Products - Transistors - Bipolar (BJT) PBSS5230PAP,115
TRANS 2PNP 30V 2A 6HUSON

TRANS 2PNP 30V 2A 6HUSON

Supplier's Site

Technical Specifications

  Nexperia B.V. DigiKey Win Source Electronics Rochester Electronics ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number PBSS5230PAP,115 1727-PBSS5230PAP,115TR-ND 1086508-PBSS5230PAP,115 PBSS5230PAP,115 277-PBSS5230PAP,115 67W0128 PBSS5230PAP,115
Product Name 30 V, 2 A PNP/PNP low VCEsat double transistor Bipolar Transistor Arrays TRANSISTORS - Transistors (BJT) - Arrays - PBSS5230PAP,115 30 V 2 A DFN Bipolar Transistor Bipolar (Bjt) Single Transistor, Dual Pnp, -30 V, 95 Mhz, 2 W, -2 A, 100 Rohs Compliant Nexperia Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Package Type SOT1118 SOT1118 6-UFDFN Exposed Pad SOT3; DFN2020-6 SOT1118 TO-3 6-HUSON (2x2)
Polarity PNP PNP; 2 PNP (Dual) PNP PNP
Transistor Grade / Operating Range Automotive
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