Nexperia B.V. 30 V, 1 A NPN/NPN low VCEsat transistor PBSS4130PAN,115

NPN/NPN low V_CEsat transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

NPN/PNP complement: PBSS4130PANP

PNP/PNP complement: PBSS5130PAP

Features and benefits

• Very low collector-emitter saturation voltage V_CEsat
• High collector current capability I_C and I_CM
• High collector current gain h_FE at high I_C
• Reduced Printed-Circuit Board (PCB) requirements
• High energy efficiency due to less heat generation

Applications

• Load switch
• Battery-driven devices
• Power management
• Charging circuits
• Power switches (e.g. motors, fans)

Small Signal Bipolar Transistor

Bipolar (BJT) Transistor Array 2 NPN (Dual) 30V 1A 165MHz 510mW Surface Mount 6-HUSON (2x2)

Bipolar (BJT) Transistor Array 2 NPN (Dual) 30V 1A 165MHz 510mW Surface Mount 6-HUSON (2x2)

Bipolar (BJT) Transistor Array 2 NPN (Dual) 30V 1A 165MHz 510mW Surface Mount 6-HUSON (2x2)

PBSS4130PAN - 30 V, 1 A NPN/NPN low VCEsat (BISS) transistor DFN 6-Pin Product overview: PBSS4130PAN,115 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30 V, 1 A, DFN. Search-friendly keywords include transistor, BJT, switching, amplification, 30 V, 1 A, DFN, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-PBSS4130PAN,115 can be used for catalog matching and distributor lookup.