NPN/NPN low V<sub>CEsat</sub> transistor in a leadless DFN2020-6 (SOT1118) package measuring 2 mm × 2 mm × 0.65 mm, with a collector-emitter voltage rating of 30 V, continuous collector current of 1 A, peak collector current of 2 A, and collector-emitter saturation resistance of 190 mΩ at 1 A collector current and 0.1 A base current. The device is designed for load switching, power management, and battery-powered applications, with a maximum junction temperature of 150 °C and operating ambient temperature range of -55 °C to 150 °C.
NPN/NPN low VCEsat transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
NPN/PNP complement: PBSS4130PANP
PNP/PNP complement: PBSS5130PAP
Features and benefits
Applications
Bipolar (BJT) Transistor Array 2 NPN (Dual) 30V 1A 165MHz 510mW Surface Mount 6-HUSON (2x2)
Bipolar (BJT) Transistor Array 2 NPN (Dual) 30V 1A 165MHz 510mW Surface Mount 6-HUSON (2x2)
Bipolar (BJT) Transistor Array 2 NPN (Dual) 30V 1A 165MHz 510mW Surface Mount 6-HUSON (2x2)
Small Signal Bipolar Transistor
PBSS4130PAN - 30 V, 1 A NPN/NPN low VCEsat (BISS) transistor DFN 6-Pin Product overview: PBSS4130PAN,115 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30 V, 1 A, DFN. Search-friendly keywords include transistor, BJT, switching, amplification, 30 V, 1 A, DFN, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-PBSS4130PAN,115 can be used for catalog matching and distributor lookup.
Bipolar (BJT) Single Transistor, Dual NPN, 30 V, 165 MHz, 2 W, 1 A, 180 RoHS Compliant: Yes
TRANS 2NPN 30V 1A 6HUSON
TRANS 2NPN 30V 1A 6HUSON
| Nexperia B.V. | DigiKey | Rochester Electronics | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | PBSS4130PAN,115 | 1727-PBSS4130PAN,115DKR-ND | PBSS4130PAN,115 | 277-PBSS4130PAN,115 | 67W0117 | PBSS4130PAN,115 | PBSS4130PAN,115 |
| Product Name | 30 V, 1 A NPN/NPN low VCEsat transistor | Bipolar Transistor Arrays | 30 V 1 A DFN Bipolar Transistor | Bipolar (Bjt) Single Transistor, Dual Npn, 30 V, 165 Mhz, 2 W, 1 A, 180 Rohs Compliant Nexperia | Bipolar Transistor Arrays | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | |
| Package Type | SOT1118 SOT1118 | 6-UFDFN Exposed Pad | SOT1118 | TO-3 | 6-UFDFN Exposed Pad | AEC-Q100 | |
| Polarity | NPN | NPN | 2 NPN (Dual); NPN | ||||
| Transistor Grade / Operating Range | Automotive | ||||||
| Packing Method | Tape Reel; Tape & Reel | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | |||||
| IC(max) | 1000 milliamps | 1000 milliamps |
